• Journal of Infrared and Millimeter Waves
  • Vol. 43, Issue 1, 1 (2024)
Yu-Fei QI1、2、5, Wen-Juan WANG2、*, Jing-Hua SUN2、3, Wen WU4, Yan LIANG4, Hui-Dan QU2, Min ZHOU2, and Wei LU1、2、**
Author Affiliations
  • 1Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
  • 2State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 3University of Shanghai for Science and Technology,Shanghai 200093,China
  • 4School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China
  • 5University of Chinese Academy of Sciences,Beijing 100049,China
  • show less
    DOI: 10.11972/j.issn.1001-9014.2024.01.001 Cite this Article
    Yu-Fei QI, Wen-Juan WANG, Jing-Hua SUN, Wen WU, Yan LIANG, Hui-Dan QU, Min ZHOU, Wei LU. High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 1 Copy Citation Text show less
    Cross-sectional schematic of the InGaAsP/InP APD
    Fig. 1. Cross-sectional schematic of the InGaAsP/InP APD
    2D electric field distribution at 2 V over bias
    Fig. 2. 2D electric field distribution at 2 V over bias
    Calculated Pa and PDE versus overbias
    Fig. 3. Calculated Pa and PDE versus overbias
    Physical appearance of an InGaAsP/InP SPAD
    Fig. 4. Physical appearance of an InGaAsP/InP SPAD
    I-V curves at different temperatures
    Fig. 5. I-V curves at different temperatures
    Schematic diagram of gated-mode single-photon detection system
    Fig. 6. Schematic diagram of gated-mode single-photon detection system
    DCRs and APPs corresponding to different PDEs at 293 K
    Fig. 7. DCRs and APPs corresponding to different PDEs at 293 K
    The DCR versus temperature at different PDEs
    Fig. 8. The DCR versus temperature at different PDEs
    Linear fit of ln (DCR/T2) versus 1/kT at various PDEs
    Fig. 9. Linear fit of ln (DCR/T2) versus 1/kT at various PDEs
    Ea versus PDEs
    Fig. 10. Ea versus PDEs
    APPs versus temperatures at different PDEs
    Fig. 11. APPs versus temperatures at different PDEs
    PDEs at different temperatures under the active quenching mode
    Fig. 12. PDEs at different temperatures under the active quenching mode
    DCRs at different temperatures under the active quenching mode
    Fig. 13. DCRs at different temperatures under the active quenching mode
    Yu-Fei QI, Wen-Juan WANG, Jing-Hua SUN, Wen WU, Yan LIANG, Hui-Dan QU, Min ZHOU, Wei LU. High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 1
    Download Citation