Jianjun Shi, Xiaochuan Xia, Qasim Abbas, Jun Liu, Heqiu Zhang, Yang Liu, Hongwei Liang. Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga2O3[J]. Journal of Semiconductors, 2019, 40(1): 012805
- Journal of Semiconductors
- Vol. 40, Issue 1, 012805 (2019)
Fig. 1. (Color online) I–V curves for as-prepared and 400 °C annealed samples. The insert is the schematic structure of the Mg/Au/β -Ga2O3 contact.
Fig. 2. (Color online) (a) Resistance of Mg/Au-β -Ga2O3 structure with two adjacent ohmic contacts versus the distance at different temperatures. (b) Contact resistance and sheet resistance of the ohmic contact Mg/Au-β -Ga2O3 versus measuring temperatures.
Fig. 3. (Color online) Specific contact resistance of the ohmic contact Mg/Au-β -Ga2O3 versus measuring temperatures.
Fig. 4. (Color online) The dependence of ln (ρ cT ) on 1/T graph about Mg/Au-β -Ga2O3 ohmic contact for the annealed sample, experimental data (point) and TE model fitting (line).
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20