• Journal of Semiconductors
  • Vol. 43, Issue 8, 082401 (2022)
Wenjing Xu1、2, Jie Chen1、*, Zhangqu Kuang3, Li Zhou1, Ming Chen1, and Chengbin Zhang1
Author Affiliations
  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Will Semiconductor Co. Ltd., Shanghai 201210, China
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    DOI: 10.1088/1674-4926/43/8/082401 Cite this Article
    Wenjing Xu, Jie Chen, Zhangqu Kuang, Li Zhou, Ming Chen, Chengbin Zhang. A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC[J]. Journal of Semiconductors, 2022, 43(8): 082401 Copy Citation Text show less
    Block diagram of the overall architecture.
    Fig. 1. Block diagram of the overall architecture.
    4T-PPD architecture.
    Fig. 2. 4T-PPD architecture.
    (Color online) PPD shape and potential profile: (a) conventional rectangle shaped, (b) proposed five-finger shaped.
    Fig. 3. (Color online) PPD shape and potential profile: (a) conventional rectangle shaped, (b) proposed five-finger shaped.
    Column circuit of the SS-ADC.
    Fig. 4. Column circuit of the SS-ADC.
    Timing diagram for dual correlated double sampling.
    Fig. 5. Timing diagram for dual correlated double sampling.
    Dual-mode counting method: (a) circuit, (b) timing diagram.
    Fig. 6. Dual-mode counting method: (a) circuit, (b) timing diagram.
    Chip photograph and layout.
    Fig. 7. Chip photograph and layout.
    (a) Timing diagram for lag test. (b) Measured lag curves with different shaped PPD.
    Fig. 8. (a) Timing diagram for lag test. (b) Measured lag curves with different shaped PPD.
    Measured photo response curves of five-finger shaped PPD with different transfer gate voltage.
    Fig. 9. Measured photo response curves of five-finger shaped PPD with different transfer gate voltage.
    Measured photon transfer curve.
    Fig. 10. Measured photon transfer curve.
    Captured image from the fabricated sensor.
    Fig. 11. Captured image from the fabricated sensor.
    (a) Measured Digital codes of the 644th column without dual-mode counting. (b) Measured Digital codes of the 644th column with dual-mode counting.
    Fig. 12. (a) Measured Digital codes of the 644th column without dual-mode counting. (b) Measured Digital codes of the 644th column with dual-mode counting.
    ParameterVoltage (V)Current (A)Power consumption (mW)
    Pixel and analog1.510.3515.525
    Digital1.216.9620.352
    I/O1.80.030.054
    Sum35.931
    Table 0. Chip power consumption.
    ParameterThis workJSSC[6]TCASI[17]Sensor[18]JSSC[4]
    * For fair comparison, conversion gain is assumed by 126.4 μV/e.
    Process (nm)1101101109065
    Pixel pitch (µm) 2.85.06.55.64.0
    Pixel type4T PPD4T PPD4T PPD4T PPDDigital
    Pixel resolution1288 × 728640 × 480320 × 240128 × 128960 × 720128 × 128
    Frame rate (fps)3015152283532
    Power supply (V)1.5/1.23.3/1.80.93.3/1.52.8/1.50.5
    Dynamic range (dB)67.3695068.966.742
    Power consumption (mW)362.280.045540280.0088
    Random noise (erms) 1.555.583.73.25*3.73*416
    FoM (e·nJ) 1.982.723.3134.84.326.98
    Table 0. Comparison with other published CIS.
    Wenjing Xu, Jie Chen, Zhangqu Kuang, Li Zhou, Ming Chen, Chengbin Zhang. A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC[J]. Journal of Semiconductors, 2022, 43(8): 082401
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