RF performance evaluation of p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET

Narendra Yadava; Shivangi Mani; R. K. Chauhan

doi:10.1088/1674-4926/41/12/122803

Journals >Journal of Semiconductors >Volume 41 >Issue 12 >Page 122803 > Article

Journal of Semiconductors
Vol. 41, Issue 12, 122803 (2020)

RF performance evaluation of p-type NiO-pocket based β-Ga₂O₃/black phosphorous heterostructure MOSFET

Narendra Yadava, Shivangi Mani, and R. K. Chauhan

Author Affiliations

Department of Electronics & Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur 273010, Indian

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DOI: 10.1088/1674-4926/41/12/122803 Cite this Article

Narendra Yadava, Shivangi Mani, R. K. Chauhan. RF performance evaluation of p-type NiO-pocket based β-Ga₂O₃/black phosphorous heterostructure MOSFET[J]. Journal of Semiconductors, 2020, 41(12): 122803 Copy Citation Text

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(Color online) (a) P-type NiO-pocket based β-Ga2O3 MOSFET. (b) P-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET.

Fig. 1. (Color online) (a) P-type NiO-pocket based β-Ga₂O₃ MOSFET. (b) P-type NiO-pocket based β-Ga₂O₃/black phosphorous heterostructure MOSFET.

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(Color online) Lattice temperature in (a) β-Ga2O3 MOSFET and (b) P-type NiO-pocket based β-Ga2O3 MOSFET.

Fig. 2. (Color online) Lattice temperature in (a) β-Ga₂O₃ MOSFET and (b) P-type NiO-pocket based β-Ga₂O₃ MOSFET.

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Fig. 3. (Color online) Potential distribution in (a) β-Ga₂O₃ MOSFET and (b) P-type NiO-pocket based β-Ga₂O₃ MOSFET.

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Fig. 4. (Color online) Transfer (I_D–V_GS) and transconductance (g_m) behavior of the devices. Inset: I_D–V_GS in log-scale.

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Fig. 5. (Color online) Output characteristics (I_D–V_DS) of the devices.

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Fig. 6. (Color online) Output conductance (g_d) behavior of the devices.

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Fig. 7. (Color online) Intrinsic capacitance (C_gs) versus gate voltage (V_GS). Inset: f_T versus V_GS.

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Fig. 8. (Color online) Intrinsic capacitance (C_gd) versus gate voltage (V_GS). Inset: GBW versus V_GS.

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Fig. 9. (Color online) (a) Output power (P_OUT) versus input power (P_IN). (b) Power-added-efficiency (PAE) versus input power (P_IN). Inset: Output power gain (G_P) versus P_IN.

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Parameter	β-Ga₂O₃^[4]	Black phosphorous^[14]
Bandgap energy (eV)	4.8	1.88
Local conduction band density of states (10¹⁷ cm⁻³)	37.2	0.3
Work function (eV)	5.23	4.56
Electron affinity (eV)	4.0	5.5
Relative permittivity (F/m)	10.0	6.1

Table 1. Material parameters used in the simulation of the β-Ga₂O₃/BP heterostructure MOS device.

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Reference	MOSFET	C_gs(pF)	C_gd(pF)	f_T(GHz)	GBW (GHz)	P_OUT (dBm)	(PAE) (%)	G_P (dB)
Ref. [8]	Exp. GO	–	–	3.30	–	13.71	6.3	5.10
Refs. [4, 17]	Conv. GO (Exp. GO. by Higashiwaki et al.)	0.33	0.13	1.87	0.5	20.64	5.8	10.50
Refs. [4, 17]	GO/BP	0.43	0.22	1.77	0.64	15.11	3.0	15.31
Ref. [22]	NiO-GO	0.29	0.13	1.27	0.48	19.30	4.8	9.75
This work	NiO-GO/BP	0.23	0.18	1.37	0.51	14.73	2.8	13.02

Table 2. RF performance comparison of the reported gallium oxide MOSFETs with the proposed NiO-GO/BP MOSFET.

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