• Journal of Semiconductors
  • Vol. 42, Issue 11, 114101 (2021)
Yuwei Cai1、2, Zhaohao Zhang1, Qingzhu Zhang1, Jinjuan Xiang1, Gaobo Xu1, Zhenhua Wu1, Jie Gu1、2, and Huaxiang Yin1
Author Affiliations
  • 1Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.1088/1674-4926/42/11/114101 Cite this Article
    Yuwei Cai, Zhaohao Zhang, Qingzhu Zhang, Jinjuan Xiang, Gaobo Xu, Zhenhua Wu, Jie Gu, Huaxiang Yin. Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches[J]. Journal of Semiconductors, 2021, 42(11): 114101 Copy Citation Text show less
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    Yuwei Cai, Zhaohao Zhang, Qingzhu Zhang, Jinjuan Xiang, Gaobo Xu, Zhenhua Wu, Jie Gu, Huaxiang Yin. Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches[J]. Journal of Semiconductors, 2021, 42(11): 114101
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