The HfO₂-based ferroelectric field effect transistors (FeFET) have been widely studied for their ability in breaking the Boltzmann limit and the potential to be applied to low-power circuits. This article systematically investigates the transient response of negative capacitance (NC) fin field-effect transistors (FinFETs) through two kinds of self-built test schemes. By comparing the results with those of conventional FinFETs, we experimentally demonstrate that the on-current of the NC FinFET is not degraded in the MHz frequency domain. Further test results in the higher frequency domain show that the on-state current of the prepared NC FinFET increases with the decreasing gate pulse width at pulse widths below 100 ns and is consistently greater (about 80% with NC NMOS) than the on-state current of the conventional transistor, indicating the great potential of the NC FET for future high-frequency applications.