Fig. 1. (Color online) Energy band structures of MoS₂ unit cell simulated with DFT showing the high symmetry points and a band gap E_G = 1.78 eV.

Fig. 2. (Color online) (a) Schematic diagram of a 3-stacked NSFET. (b) Bird eye view and cross-sectional view along the channel of simulated structure in Sentaurus. (c) Simulation framework of this work. (d) Calibration of transfer curves to experimental data in log and linear form. Experimental data are from a 3-stacked NSFET (L_G = 10 nm).

Fig. 3. (Color online) Electrostatic performance comparison of Si and MoS₂ based 3-stacked NSFET. (a) Transfer characteristics. (b) Roll-off. (c) DIBL. (d) SS.

Fig. 4. (Color online) (a) Comparison of Si and MoS₂ based 3-stacked NSFET in terms of C_G–V_G characteristic. (b) C_G vs V_G with different sheet widths. (c) C_G vs V_G with different number of stacks. (d) C_G, C_GS, C_GD vs V_D, separately.

Table 1. Parameters used in this work.