Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes

Jan Ruschel; Johannes Glaab; Batoul Beidoun; Neysha Lobo Ploch; Jens Rass; Tim Kolbe; Arne Knauer; Markus Weyers; Sven Einfeldt; Michael Kneissl

doi:10.1364/PRJ.7.000B36

Journals >Photonics Research >Volume 7 >Issue 7 >Page B36 > Article

Photonics Research
Vol. 7, Issue 7, B36 (2019)

Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes

Jan Ruschel^1、*, Johannes Glaab¹, Batoul Beidoun¹, Neysha Lobo Ploch¹, Jens Rass¹, Tim Kolbe¹, Arne Knauer¹, Markus Weyers¹, Sven Einfeldt¹, and Michael Kneissl^1、2

Author Affiliations

¹Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

²Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin, Germany

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DOI: 10.1364/PRJ.7.000B36 Cite this Article Set citation alerts

Jan Ruschel, Johannes Glaab, Batoul Beidoun, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Arne Knauer, Markus Weyers, Sven Einfeldt, Michael Kneissl. Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes[J]. Photonics Research, 2019, 7(7): B36 Copy Citation Text

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