Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Rui Zhou; Cui Yu; Chuangjie Zhou; Jianchao Guo; Zezhao He; Yanfeng Wang; Feng Qiu; Hongxing Wang; Shujun Cai; Zhihong Feng

doi:10.1088/1674-4926/41/12/122801

Journals >Journal of Semiconductors >Volume 41 >Issue 12 >Page 122801 > Article

Journal of Semiconductors
Vol. 41, Issue 12, 122801 (2020)

Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Rui Zhou¹, Cui Yu^1、2, Chuangjie Zhou^1、2, Jianchao Guo^1、2, Zezhao He^1、2, Yanfeng Wang³, Feng Qiu³, Hongxing Wang³, Shujun Cai¹, and Zhihong Feng^1、2

Author Affiliations

¹Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

²National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

³School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China

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DOI: 10.1088/1674-4926/41/12/122801 Cite this Article

Rui Zhou, Cui Yu, Chuangjie Zhou, Jianchao Guo, Zezhao He, Yanfeng Wang, Feng Qiu, Hongxing Wang, Shujun Cai, Zhihong Feng. Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond[J]. Journal of Semiconductors, 2020, 41(12): 122801 Copy Citation Text

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Fig. 1. (Color online) (a) Raman spectra of the I-PC, II-PC, and III-SC diamond samples. (b) XRD pattern of I-PC, and II-PC diamond samples.

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Fig. 2. (Color online) Pulsed I–V characteristics of III-SC diamond FET.

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Fig. 3. (Color online) Relationship of cutoff frequency f_T with gate length for diamond FETs^{[2-4, 15-18]}.

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Fig. 4. (Color online) Large signal performance of I-PC diamond FET at 2 GHz power sweep (A-class).

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Sample name	I_ds (mA/mm)	g_m (mS/mm)	Gate length and source–drain space	Drain-lag effect
I-PC	323	66	T-gate, L_g = 350 nm, L_SD = 3 μm, W_g = 100 μm × 2	2.7%
II-PC	466	58	Rectangular gate, L_G = 400 nm, L_SD = 1.6 μm, W_g = 100 μm × 2	10%
III-SC	233	62	T-gate, L_g = 350 nm, L_SD = 2 μm, W_g = 100 μm × 2	3.7%

Table 1. Critical dimensions and DC characteristics of the diamond FETs.

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Sample	C_gs (fF)	C_gd (fF)	g_m (mS)	R_i (Ω)	R_g (Ω)	R_d (Ω)	R_s (Ω)	f_T(GHz)	f_max(GHz)
I-PC	172.4	5.54	22.3	16	23	49	38	17	30
II-PC	102.4	17.6	20.7	14.6	32	30.3	27.7	20.7	19.5
III-SC	130	8.9	20.8	7.8	18	42	35	23	49

Table 2. Component parameters for the three diamond FETs.

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Sample	Measured output power density (mW/mm)	Calculated output power density (mW/mm)	Measured conditions
Sample	Measured output power density (mW/mm)	Calculated output power density (mW/mm)	V_ds(V)	V_gs(V)
I-PC	877	1600	–25	–1.7
II-PC	745	2100	–24	–1
III-SC	815	1200	–25	–1

Table 3. Compare of measured and calculated output power densities for the three diamond samples (I-PC, II-PC, and III-PC).

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