[1] C J H Wort, R S Balmer. Diamond as an electronic material. Mater Today, 11, 22(2008).
[2] K Hirama, H Sato, Y Harada et al. Thermally stable operation of H-terminated diamond FETs by NO2 adsorption and Al2O3 passivation. IEEE Electron Device Lett, 33, 1111(2012).
[3] K Ueda, M Kasu, Y Yamauchi et al. Diamond FET using high-quality polycrystalline diamond with
[4] S Imanishi, K Horikawa, N Oi et al. 3.8 W/mm RF power density for ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity. IEEE Electron Device Lett, 40, 279(2018).
[5]
[6]
[7] J J Wang, Z Z He, C Yu et al. Comparison of field-effect transistors on polycrystalline and single-crystal diamonds. Diamond Relat Mater, 70, 114(2016).
[8]
[9] S D Woltera, J T Praterb, Z Sitara. Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame. J Cryst Growth, 226, 88(2001).
[10] C J Zhou, J J Wang, J C Guo et al. Radio frequency performance of hydrogenated diamond MOSFETs with alumina. Appl Phys Lett, 114, 063501(2019).
[11] C Yu, C J Zhou, J C Guo et al. 650 mW/mm output power density of H-terminated polycrystalline diamond MISFET at 10 GHz. Electron Lett, 56, 334(2020).
[12] H Sato, M Kasu. Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2. Diamond Relat Mater, 31, 47(2013).
[13] S Yamanaka, D Takeuchi, H Watanabe et al. Low-compensated boron-doped homoepitaxial diamond films using trimethylboron. Phys Status Solidi A, 174, 59(1999).
[14] K Hirama, K Tuge, S Sato et al. High performance p-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface. Appl Phys Express, 3, 044001(2010).
[15] S A O Russell, S Sharabi, A Tallaire et al. Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Lett, 33, 1471(2012).
[16] K Hirama, H Takayanagi, S Yamauchi et al. High-performance p-channel diamond MOSFETs with alumina gate insulator. IEDM Tech Dig, 873(2007).
[17] V Camarchia, F Cappelluti, G Ghione et al. RF power performance evaluation of surface channel diamond MESFETs. Solid-State Electron, 55, 19(2011).
[18] X X Yu, C J Zhou, C J Qi et al. A high frequency hydrogen-terminated diamond MISFET With
[19] P J Tasker, B Hughes. Importance of source and drain resistance to the maximum
[20] T G Ivanov, J Wei, P B Shah et al. Diamond RF transistor technology with