A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1–xN heterojunction grown on AlN substrate

Mussaab I. Niass; Muhammad Nawaz Sharif; Yifu Wang; Zhengqian Lu; Xue Chen; Yipu Qu; Zhongqiu Du; Fang Wang; Yuhuai Liu

doi:10.1088/1674-4926/40/12/122802

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