Mussaab I. Niass, Muhammad Nawaz Sharif, Yifu Wang, Zhengqian Lu, Xue Chen, Yipu Qu, Zhongqiu Du, Fang Wang, Yuhuai Liu. A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1–xN heterojunction grown on AlN substrate[J]. Journal of Semiconductors, 2019, 40(12): 122802
- Journal of Semiconductors
- Vol. 40, Issue 12, 122802 (2019)
Fig. 1. (Color online) The optical intensity confined within the active region for optical confining factor (OCF) of 40.4%.
Fig. 2. (Color online) Illustrate the L –I and V –I electrical characteristic curves for the conventional EBL, tapered EBL, without EBL and inverse tapered EBL designs.
Fig. 3. (Color online) Schematic illustrations for the right half of simulated structure, real cavity length are 1500 µ m.
Fig. 4. (Color online) Showing the (a) L –I and (b) V –I curve for the two LD structure for the conventional EBL, tapered EBL, without EBL and inverse tapered EBL designs with the N A = 5 × 1020 cm–3, N D = 9 × 1019 cm–3.
Fig. 5. (Color online) Showing the relationship between the averages calculated electron concentrations within the P-Cladding layer for different accepter and donor concentrations for the four EBL designs.
Fig. 6. (Color online) Vertical cut view for the LD structure that illustrates the band diagram for the active region and EBL layer, with the N A = 5 × 1017 cm–3, N D = 9 × 1016 cm–3 for the four different EBL layers.
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Table 1. The contrived LD structure at room temperature for B0.313GaN/B0.40GaN MQW (p, p-type Mg-dopant; n, n-type Si-dopant; i, intrinsic/no-doping; CLL, cladding layer; WG, wave guide; EBL-IT, electron blocking layer-inverse tapered).
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