Effects of Reactive Ion Etching Parameters on Etching Rate and Surface Roughness of 4H-SiC

Zehong Wan; Enkang Cui; Shengtao Yu; Yu Lei; Chengqun Gui; Shengjun Zhou

doi:10.3788/LOP202158.1922002

Journals >Laser & Optoelectronics Progress >Volume 58 >Issue 19 >Page 1922002 > Article

Laser & Optoelectronics Progress
Vol. 58, Issue 19, 1922002 (2021)

Effects of Reactive Ion Etching Parameters on Etching Rate and Surface Roughness of 4H-SiC

Zehong Wan¹, Enkang Cui¹, Shengtao Yu², Yu Lei², Chengqun Gui¹, and Shengjun Zhou^1、2、*

Author Affiliations

¹The Institute of Technological Science, Wuhan University, Wuhan , Hubei 430072, China

²School of Power and Mechanical Engineering, Wuhan University, Wuhan , Hubei 430072, China

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DOI: 10.3788/LOP202158.1922002 Cite this Article Set citation alerts

Zehong Wan, Enkang Cui, Shengtao Yu, Yu Lei, Chengqun Gui, Shengjun Zhou. Effects of Reactive Ion Etching Parameters on Etching Rate and Surface Roughness of 4H-SiC[J]. Laser & Optoelectronics Progress, 2021, 58(19): 1922002 Copy Citation Text

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