[1] S R Ovshinsky. Reversible electrical switching phenomena in disordered structures. Phys Rev Lett, 21, 1450(1968).

[2] J S Washington, E A Joseph, S Raoux et al. Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge₂Sb₂Te₅. J Appl Phys, 109, 034502(2011).

[3] C Xu, B Liu, Z T Song et al. Reactive-ion etching of Sn-doped Ge₂Sb₂Te₅ in CHF₃/O₂ plasma for non-volatile phase-change memory device. Thin Solid Films, 516, 7871(2008).

[4] Z T Song, S N Song, M Zhu et al. From octahedral structure motif to sub-nanosecond phase transitions in phase change materials for data storage. Sci China Inf Sci, 61, 081302(2018).

[5] F Rao, Z T Song, K Ren et al. Si–Sb–Te materials for phase change memory applications. Nanotechnology, 22, 145702(2011).

[6] J T Li, Y Y Xia, B Liu et al. Direct evidence of reactive ion etching induced damages in Ge₂Sb₂Te₅ based on different halogen plasmas. Appl Surf Sci, 378, 163(2016).

[7] J T Li, Y Y Xia, B Liu et al. Etch characteristics and mechanism of TiSbTe thin films in inductively-coupled HBr-He, Ar, N₂, O₂ plasma. ECS J Solid State Sci Technol, 5, P330(2016).

[8] L L Shen, S N Song, Z H Zhang et al. Characteristics and mechanism of phase change material W_0.03Sb₂Te etched by Cl₂/BCl₃ inductively coupled plasmas. Thin Solid Films, 593, 67(2015).

[9] Z H Zhang, S N Song, Z T Song et al. Characteristics and mechanism of Al_1.3Sb₃Te etched by Cl₂/BCl₃ inductively coupled plasmas. Microelectron Eng, 115, 51(2014).

[10] S K Kang, M H Jeon, J Y Park et al. Etch damage of Ge₂Sb₂Te₅ for different halogen gases. Jpn J Appl Phys, 50, 086501(2011).