The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

Yongkang Xu; Sannian Song; Wencheng Fang; Chengxing Li; Zhitang Song

doi:10.1088/1674-4926/41/12/122103

Journals >Journal of Semiconductors >Volume 41 >Issue 12 >Page 122103 > Article

Journal of Semiconductors
Vol. 41, Issue 12, 122103 (2020)

The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma

Yongkang Xu^1、2, Sannian Song¹, Wencheng Fang^1、2, Chengxing Li^1、2, and Zhitang Song¹

Author Affiliations

¹State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

²University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/41/12/122103 Cite this Article

Yongkang Xu, Sannian Song, Wencheng Fang, Chengxing Li, Zhitang Song. The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma[J]. Journal of Semiconductors, 2020, 41(12): 122103 Copy Citation Text

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Abstract

Compared to the conventional phase change materials, the new phase change material Ta-Sb₂Te₃ has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb₂Te₃ were studied by using CF₄/Ar. The results showed that when CF₄/Ar = 25/25, the etching power was 600 W and the etching pressure was 2.5 Pa, the etching speed was up to 61 nm/min. The etching pattern of Ta-Sb₂Te₃ film had a smooth side wall and good perpendicularity (close to 90°), smooth surface of the etching (RMS was 0.51nm), and the etching uniformity was fine. Furthermore, the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy (XPS). The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction (XRD).

$\begin{array}{l} {\rm{Ta}} + {{\rm{F}}^--} \to {\rm{Ta}}{{\rm{F}}_4},\\ {\rm{CF}}_x^ + + {{\rm{F}}^ - } \to {\rm{C}}{{\rm{F}}_x},\\ {\rm{S}}{{\rm{b}}^{3/5 + }} + {{\rm{F}}^ - } \to {\rm{Sb}}{{\rm{F}}^{3/5}},\\ {\rm{T}}{{\rm{e}}^{4/6 + }} + {{\rm{F}}^ - } \to {\rm{Te}}{{\rm{F}}^{4/6}}. \end{array}$

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