Fig. 1. (Color online) (a) The top and side views of puckered arsenene. (b) The band structure at PBE (purple line) and HSE06 (orange line) level and the orbital-projected density of states of the puckered arsenene. (c) The partial charge density of CBM and VBM.

Fig. 2. (Color online) The band dispersions of the CBM along (a) the armchair direction and (b) the zigzag direction, and that of VBM along (c) the armchair direction and (d) the zigzag direction. The corresponding effective mass and carrier mobility are also marked out.

Fig. 3. (Color online) The schematic model of dual-gated puckered arsenene MOSFET along (a) the armchair and (c) zigzag direction. The transfer characteristics for puckered arsenene n- and p-MOSFETs along (b) the armchair and (d) zigzag direction with L_ch = 3–10 nm.

Fig. 4. (Color online) The SS and the on/off ratio as a function of the L_ch for the puckered arsenene assessed according to the IRDS requirements for HP applications.

Fig. 5. (Color online) The position resolved LDOS and spectral currents of puckered arsenene n-FETs with 5-nm L_ch with the transport direction along (a) armchair and (b) zigzag direction as V_gs = –1 V. The position resolved LDOS and spectral current of 5-nm-L_ch P-FETs along (c) the armchair and (d) zigzag directions as V_gs = 0.9 V.

Fig. 6. (Color online) Switching energy versus delay time, τ, for a 32-bit ALU based on puckered arsenene FETs in HP conditions.