Contents
2020
Volume: 41 Issue 8
14 Article(s)

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Articles
Controlled growth of Mo2C pyramids on liquid Cu surface
Yixuan Fan, Le Huang, Dechao Geng, and Wenping Hu
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 082001 (2020)
High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure
Chang Li, Cheng Chen, Jie Chen, Tao He, Hongwei Li, Zeyuan Yang, Liu Xie, Zhongchang Wang, and Kai Zhang
Black phosphorous (BP), an excellent two-dimensional (2D) monoelemental layered p-type semiconductor material with high carrier mobility and thickness-dependent tunable direct bandgap structure, has been widely applied in various devices. As the essential building blocks for modern electronic and optoelectronic devices
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 082002 (2020)
On the mystery of the absence of a spin-orbit gap in scanning tunneling microscopy spectra of germanene
Carolien Castenmiller, and Harold J. W. Zandvliet
Germanene, the germanium analogue of graphene, shares many properties with its carbon counterpart. Both materials are two-dimensional materials that host Dirac fermions. There are, however, also a few important differences between these two materials: (1) graphene has a planar honeycomb lattice, whereas germanene’s hon
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 082003 (2020)
Strain tunable band structure of a new 2D carbon allotrope C568
Qiang Gao, Hasan Sahin, and Jun Kang
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 082005 (2020)
First-principle study of puckered arsenene MOSFET
Hengze Qu, Ziwei Lin, Ruijuan Guo, Xiyu Ming, Wenhan Zhou, Shiying Guo, Xiufeng Song, Shengli Zhang, and Haibo Zeng
Two-dimensional material has been regarded as a competitive silicon-alternative with a gate length approaching sub-10 nm, due to its unique atomic thickness and outstanding electronic properties. Herein, we provide a comprehensively study on the electronic and ballistic transport properties of the puckered arsenene by
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 082006 (2020)
Editorial
Preface to the Special Issue on Monoelemental 2D Semiconducting Materials and Their Applications
Han Zhang, Xiantao Jiang, Yeliang Wang, Krassimir Panajotov, and Shengli Zhang
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 080101 (2020)
News and Views
Photodetectors based on 2D material/Si heterostructure
Jingshu Zhou, Juehan Yang, and Zhongming Wei
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 080401 (2020)
A new single-element layered two-dimensional semiconductor: black arsenic
Mianzeng Zhong, and Jun He
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 080402 (2020)
Research Highlight
High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films
Jianhua Zhao
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 080201 (2020)
A crystal graph multilayer descriptor
Dahai Wei
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 080202 (2020)
Reviews
Physical vapor deposited 2D bismuth for CMOS technology
Hanliu Zhao, Xinghao Sun, Zhengrui Zhu, Wen Zhong, Dongdong Song, Weibing Lu, and Li Tao
Two-dimensional (2D) bismuth, bismuthene, is an emerging pnictogen family member that has received increasing research attention in the past few years, which could yield exotic electrical, thermal, and optical properties due to unique band structure. This review provides a holistic view of recent research advances on 2
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 081001 (2020)
Tellurene: An elemental 2D monolayer material beyond its bulk phases without van der Waals layered structures
Xiaolin Cai, Xiaoyu Han, Chunxiang Zhao, Chunyao Niu, and Yu Jia
Due to the quantum confinement effect, atomically thin two-dimensional (2D) monolayer materials possess distinct characteristics from their corresponding bulk materials, which have received wide attention from science and industry. Among all the 2D materials, elemental 2D materials with the simplest components are most
Journal of Semiconductors
  • Publication Date: Aug. 01, 2020
  • Vol. 41, Issue 8, 081002 (2020)