• Chinese Optics Letters
  • Vol. 15, Issue 6, 062501 (2017)
Mohammad Hosseini1, Hassan Kaatuzian1、*, and Iman Taghavi2
Author Affiliations
  • 1Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology, Tehran 15914, Iran
  • 2Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, 30332, USA
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    DOI: 10.3788/COL201715.062501 Cite this Article Set citation alerts
    Mohammad Hosseini, Hassan Kaatuzian, Iman Taghavi. Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures[J]. Chinese Optics Letters, 2017, 15(6): 062501 Copy Citation Text show less
    Schematic energy band diagram of (a) the primary TL proposed by Feng and Holonyak[3] (first structure), (b) first proposed GRIN-SCH structure, (second structure), and (c) second proposed GRIN-SCH structure (third structure) under forward bias. Slope of the band diagram in SCH1 and SCH2, which determines the magnitude of the quasi-electric field.
    Fig. 1. Schematic energy band diagram of (a) the primary TL proposed by Feng and Holonyak[3] (first structure), (b) first proposed GRIN-SCH structure, (second structure), and (c) second proposed GRIN-SCH structure (third structure) under forward bias. Slope of the band diagram in SCH1 and SCH2, which determines the magnitude of the quasi-electric field.
    Calculated minority electron distribution for (a) the first proposed GRIN-SCH structure and (b) the second proposed GRIN-SCH structure. (a) is in good agreement with the calculated carrier population for the GRIN-SCH QW laser[14], and (b) also complies with the results of graded base HBTs[4].
    Fig. 2. Calculated minority electron distribution for (a) the first proposed GRIN-SCH structure and (b) the second proposed GRIN-SCH structure. (a) is in good agreement with the calculated carrier population for the GRIN-SCH QW laser[14], and (b) also complies with the results of graded base HBTs[4].
    Calculated dc gain βdc(IC/IB). The dc current gain reduces significantly, when the second structure is employed, because of the funnel form of this structure.
    Fig. 3. Calculated dc gain βdc(IC/IB). The dc current gain reduces significantly, when the second structure is employed, because of the funnel form of this structure.
    Calculated optical output power P.
    Fig. 4. Calculated optical output power P.
    Optical frequency response for the original and proposed GRIN-SCH structures. The −3 dB bandwidth of the original TL (first structure) is ∼19.5 GHz, and for the second and third structures they are 21 and 20 GHz, respectively.
    Fig. 5. Optical frequency response for the original and proposed GRIN-SCH structures. The 3dB bandwidth of the original TL (first structure) is 19.5GHz, and for the second and third structures they are 21 and 20 GHz, respectively.
    Confinement structure dependency: (a) electrical and (b) optical characteristics of the SQW TL.
    Fig. 6. Confinement structure dependency: (a) electrical and (b) optical characteristics of the SQW TL.
    Structure
    Device ParameterSymbolUnitCalculation Approach Ref.1st2nd3rd
    Effective minority electron mobilitySCH1μ1cm2/Vs[12]1068964.7919.325
    SCH2μ2cm2/Vs10681014.051014.05
    Diffusion constantSCH1D1cm2/s[4]27.6124.8823.71
    SCH2D2cm2/s27.6126.1626.16
    Quasi-electric fieldSCH1ε1V/cm[4]01.22×1041.22×104
    SCH2ε2V/cm01.18×1041.18×104
    Effective recombination lifetimeSCH1τB1ps[9]201220243
    SCH2τB2ps201210210
    Optical confinement factorΓ%[9]5.825.655.51
    Optical lossαicm1[9]20.1419.5619.07
    Photon lifetimeτpps[9]2.572.592.61
    Electron capture timeτcapps[9]0.900.560.57
    Table 1. Calculated Physical Parameters for All Three Structures
    Mohammad Hosseini, Hassan Kaatuzian, Iman Taghavi. Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures[J]. Chinese Optics Letters, 2017, 15(6): 062501
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