Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures

Mohammad Hosseini; Hassan Kaatuzian; Iman Taghavi

doi:10.3788/COL201715.062501

Journals >Chinese Optics Letters >Volume 15 >Issue 6 >Page 062501 > Article

Chinese Optics Letters
Vol. 15, Issue 6, 062501 (2017)

Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures

Mohammad Hosseini¹, Hassan Kaatuzian^1、*, and Iman Taghavi²

Author Affiliations

¹Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology, Tehran 15914, Iran

²Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, 30332, USA

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DOI: 10.3788/COL201715.062501 Cite this Article Set citation alerts

Mohammad Hosseini, Hassan Kaatuzian, Iman Taghavi. Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures[J]. Chinese Optics Letters, 2017, 15(6): 062501 Copy Citation Text

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