• Acta Optica Sinica
  • Vol. 43, Issue 19, 1900001 (2023)
Jun Qiu1,2, Guanghua Yang1, Jing Li1,2,*, Zengxiong Lu1,2, and Minxia Ding1
Author Affiliations
  • 1Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/AOS230637 Cite this Article Set citation alerts
    Jun Qiu, Guanghua Yang, Jing Li, Zengxiong Lu, Minxia Ding. Development and Challenges of Lithographical Alignment Technologies[J]. Acta Optica Sinica, 2023, 43(19): 1900001 Copy Citation Text show less
    Evolution route of alignment technologies of ASML, Nikon, and Canon
    Fig. 1. Evolution route of alignment technologies of ASML, Nikon, and Canon
    Schematic diagram of phase grating alignment (PGA) method[39]
    Fig. 2. Schematic diagram of phase grating alignment (PGA) method[39]
    Schematic diagram of TTL alignment technology[41]
    Fig. 3. Schematic diagram of TTL alignment technology[41]
    Schematic diagram of XPA mark composed of four gratings[43]
    Fig. 4. Schematic diagram of XPA mark composed of four gratings[43]
    Curve of normalized ±1 order diffraction light alignment signal strength versus slot depth in TTL alignment technology[14]
    Fig. 5. Curve of normalized ±1 order diffraction light alignment signal strength versus slot depth in TTL alignment technology14
    Schematic diagram of ATHENA[45]
    Fig. 6. Schematic diagram of ATHENA[45]
    Schematic diagram of diffraction stage separation in ATHENA[40]
    Fig. 7. Schematic diagram of diffraction stage separation in ATHENA[40]
    Curve of normalized ±1-±7 order diffraction light alignment signal strength versus slot depth in ATHENA[14,47]. (a) Normalized alignment signal strength corresponding to each wavelength; (b) maximum normalized alignment signal strength
    Fig. 8. Curve of normalized ±1-±7 order diffraction light alignment signal strength versus slot depth in ATHENA[14,47]. (a) Normalized alignment signal strength corresponding to each wavelength; (b) maximum normalized alignment signal strength
    Schematic diagram of ATHENA mark[43]
    Fig. 9. Schematic diagram of ATHENA mark[43]
    Schematic diagram of SPM mark improvement[3]. (a) Schematic diagram of SSPM-X mark (Image rotated by 90° is SSPM-Y mark); (b) schematic diagram of NSSM-X mark (Image rotated by 90° is NSSM-Y mark)
    Fig. 10. Schematic diagram of SPM mark improvement3. (a) Schematic diagram of SSPM-X mark (Image rotated by 90° is SSPM-Y mark); (b) schematic diagram of NSSM-X mark (Image rotated by 90° is NSSM-Y mark)
    Schematic diagram of SMASH[39,53]
    Fig. 11. Schematic diagram of SMASH[39,53]
    Schematic diagram of interferometer module structure in SMASH[53]
    Fig. 12. Schematic diagram of interferometer module structure in SMASH[53]
    Schematic diagram of SMASH mark[3]
    Fig. 13. Schematic diagram of SMASH mark[3]
    Basis of D4C software evaluation and screening marks[60-61]
    Fig. 14. Basis of D4C software evaluation and screening marks[60-61]
    Flow chart of D4C software design marking[57]
    Fig. 15. Flow chart of D4C software design marking[57]
    Type of mark and segmented method[61]. (a) Unsegmented mark; (b) scan direction segmented mark; (c) non-scan direction segmented mark; (d) scan direction and non-scan direction segmented marks; (e) inclined segmented mark
    Fig. 16. Type of mark and segmented method[61]. (a) Unsegmented mark; (b) scan direction segmented mark; (c) non-scan direction segmented mark; (d) scan direction and non-scan direction segmented marks; (e) inclined segmented mark
    Mark asymmetric deformation resulting in position error[57]. (a) Schematic diagram of marking symmetry; (b) schematic diagram of marking asymmetry
    Fig. 17. Mark asymmetric deformation resulting in position error[57]. (a) Schematic diagram of marking symmetry; (b) schematic diagram of marking asymmetry
    Schematic diagram of OCW method[63]
    Fig. 18. Schematic diagram of OCW method[63]
    Simulation results of filtering effect of WAMM model mapping matrix M[64]
    Fig. 19. Simulation results of filtering effect of WAMM model mapping matrix M[64]
    Schematic diagram of LSA. (a) Three-dimensional diagram[23] ; (b) schematic diagram of X direction[24]
    Fig. 20. Schematic diagram of LSA. (a) Three-dimensional diagram[23] ; (b) schematic diagram of X direction[24]
    LSA mark[24]. (a) Search mark-X; (b) search mark-Y; (c) EGA mark-X; (d) EGA mark-Y
    Fig. 21. LSA mark[24]. (a) Search mark-X; (b) search mark-Y; (c) EGA mark-X; (d) EGA mark-Y
    Schematic diagram of FIA[22]
    Fig. 22. Schematic diagram of FIA[22]
    FIA mark[73]. (a) Search mark; (b) EGA mark
    Fig. 23. FIA mark[73]. (a) Search mark; (b) EGA mark
    Schematic diagram of LIA[22]
    Fig. 24. Schematic diagram of LIA[22]
    Schematic diagram of TTL alignment technology[31]
    Fig. 25. Schematic diagram of TTL alignment technology[31]
    Schematic diagram of TTL alignment mark[31]
    Fig. 26. Schematic diagram of TTL alignment mark[31]
    Schematic diagram of OAL for single stage lithography machine[34]
    Fig. 27. Schematic diagram of OAL for single stage lithography machine[34]
    OAL alignment mark. (a) Cross alignment mark[77]; (b) long strip alignment mark[78]
    Fig. 28. OAL alignment mark. (a) Cross alignment mark[77]; (b) long strip alignment mark[78]
    Multi grating alignment system[79]. (a) Structure diagram of alignment system; (b) structure diagram of alignment mark
    Fig. 29. Multi grating alignment system[79]. (a) Structure diagram of alignment system; (b) structure diagram of alignment mark
    Reflection-style alignment optical path based on Moiré fringes[16]
    Fig. 30. Reflection-style alignment optical path based on Moiré fringes[16]
    Four-quadrant gratings Moiré fringe alignment mark[81]. (a) Silicon wafer grating mark; (b) mask grating mark
    Fig. 31. Four-quadrant gratings Moiré fringe alignment mark[81]. (a) Silicon wafer grating mark; (b) mask grating mark
    Simultaneous multi-channel absolute position alignment by multi-order grating interferometry[89]
    Fig. 32. Simultaneous multi-channel absolute position alignment by multi-order grating interferometry[89]
    Principle diagram of self-coherence Moiré fringe alignment technology[21]
    Fig. 33. Principle diagram of self-coherence Moiré fringe alignment technology[21]
    Comparison diagram of diffraction efficiency of each mark[92]. (a) AH11; (b) AH53; (c) IME3; (d) IME5
    Fig. 34. Comparison diagram of diffraction efficiency of each mark[92]. (a) AH11; (b) AH53; (c) IME3; (d) IME5
    CompanyTechnologyLight sourceRelationship between optical path and exposure systemCharacteristic
    ASMLThrough-the-lens(TTL)633 nm laserCoaxial

    High signal-to-noise ratio;

    good process stability

    Advanced technology using high-order enhanced alignment(ATHENA)532 and 633 nm laserOff-axis

    Good process stability;

    mitigate interference cancellation;strong robustness

    Smart alignment sensor hybrid(SMASH)532,633,780,and 850 nm laserOff-axisInsensitivity to even aberrations;no reference grating;larger numerical aperture(NA);simultaneous alignment in X/Y direction
    Multi wavelength and high process adaptive alignment(ORION)12 wavelength laserOff-axis

    More measurement channels;

    strong system stability;

    less impact due to asymmetry

    NikonLaser step alignment(LSA)633 nm laserCoaxial

    High sensitivity;

    high recognition ability

    Field image alignment(FIA)Halogen lampOff-axisMitigate interference cancellation;simultaneous alignment in X/Y direction
    Laser interferometer alignment(LIA)633 nm laserCoaxialOptical heterodyne interferometry;large lighting area;less impact due to coarse particles
    CanonTTLlaserCoaxialHigh signal-to-noise ratio;good process stability
    Off axis alignment(OAL)Halogen lampOff-axisLow workload of color difference correction design;mitigate interference cancellation
    Table 1. Characteristics of alignment technologies of ASML, Nikon, and Canon
    CompanyAlignment markDimensionCharacteristic
    ASMLExtended primary mark(XPA)Two-dimensionalGrating with two periods;large area
    Scribe-lane primary mark(SPM)One-dimensional

    Split XPA into X and Y directions;

    small area

    Short SPM(SSPM)One-dimensionalSame width as SPM mark;about half length of SPM mark;lower wafer quality than SPM
    Narrow short SPM(NSSM)One-dimensionalSmaller width than SPM markers;same length as SSPM mark;lower wafer quality than SSPM
    SMASH marksTwo-dimensional180° symmetry;various forms;one scan to achieve alignment in two directions
    NikonLSA markOne-dimensionalIncluding search mark and enhanced global alignment(EGA)mark;single or multiple bars composed of grid shape
    FIA markTwo-dimensionalIncluding search mark and EGA mark;search mark are reticulated;EGA mark consisting of one-dimensional gratings in X and Y directions
    LIA markTwo-dimensionalSimilar with FIA marks
    CanonTTL markOne-dimensionalTilt to middle;45° from scanning direction
    OAL markTwo-dimensionalCross alignment mark with large area or long strip alignment mark with small area;one scan to achieve alignment in two directions
    Table 2. Characteristic of alignment marks of ASML, Nikon, and Canon
    TechnologyTTLATHENASMASHORION
    Process node /nm1309065-57-5
    Measuring wavelength /nm633532,633532,633,780,85012 wavelengths
    Capture range /μm±44±44±44±44
    Spot size /μm700700~36<36
    Diffraction order range(@period is 16 μm)±1±7±11±13
    NA0.050.30.60.7
    Interference generation methodReference gratingReference gratingSelf-reference interferenceSelf-reference interference
    Table 3. Parameter characteristics of ASML alignment technologies
    TechnologyLSAFIALIA
    Light sourceHe-Ne laserHalogen lampHe-Ne laser
    Illumination modeDark field illuminationBright field illuminationBright field illumination
    TechnologyPhase grating intensity measurementImage processing techniquesHeterodyne interferometry
    Scope of applicationMost marksRough plane/Asymmetric marksShallow groove marks/ Metallic layer
    Table 4. Parameter characteristics of Nikon alignment technologies