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Journals >Journal of Infrared and Millimeter Waves >Volume 41 >Issue 4 >Page 668 > Article

Journal of Infrared and Millimeter Waves
Vol. 41, Issue 4, 668 (2022)

Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process

Guo-Hao JU^1,2,3, Zheng-Xi CHENG^1,*, and Yong-Ping CHEN^1,4,**

Author Affiliations

¹Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

²University of Chinese Academy of Sciences，Beijing 100049，China

³School of Information Science and Technology，ShanghaiTech University，Shanghai 201210，China

⁴Nantong Academy of Intelligent Sensing，Nantong 226000，China

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DOI: 10.11972/j.issn.1001-9014.2022.04.002 Cite this Article

Guo-Hao JU, Zheng-Xi CHENG, Yong-Ping CHEN. Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 668 Copy Citation Text

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References

[1] O Christensen. Quantum efficiency of the internal photoelectric effect in silicon and germanium. Journal of Applied Physics, 47, 689-695(1976).

[2] K Seeger. Impact ionization and avalanche breakdown. Semiconductor Physics, 291-301(1982).

[3] Z Cheng, H Xu, Y Chen. Design of low noise avalanche photodiode single element detectors and linear arrays through CMOS process(2019).

[4] I Wêgrzecka, M Wêgrzecki, M Grynglas et al. Design and properties of silicon avalanche photodiodes. Opto-Electron Rev, 12, 95-104(2004).

[5] P Brandl, T Jukic, R Enne et al. Optical wireless apd receiver with high background-light immunity for increased communication Distances. IEEE Journal of Solid-State Circuits, 51, 1663-1673(2016).

[6] P Brandl, R Enne, T Jukic et al. OWC using a fully integrated optical receiver with large-diameter APD. IEEE Photonics Technology Letters, 27, 482-485(2015).

[7] R Enne, B Steindl, H Zimmermann et al. Improvement of CMOS-Integrated vertical APDs by applying lateral well modulation. Photonics Technology Letters, IEEE, 27, 1907-1910(2015).

[8] R Enne, B Steindl, H Zimmermann. Speed optimized linear-mode high-voltage CMOS avalanche photodiodes with high responsivity. Optics Letters, 40, 4400-4403(2015).

[9] I Takai, H Matsubara, M Soga et al. Single-photon avalanche diode with enhanced NIR-sensitivity for automotive LIDAR systems. Sensors (Basel), 16, 459(2016).

[10] K Iiyama, H Takamatsu, T Maruyama. Silicon lateral avalanche photodiodes fabricated by standard0.18 µm CMOS process, 1-2(2009).

[11] C K Tseng, K H Chen, W T Chen et al. A high-speed and low-breakdown-voltage silicon avalanche photodetector. IEEE Photonics Technology Letters, 26, 591-594(2014).

[12] B Ciftcioglu, J Zhang, L Zhang et al. 3-GHz Silicon Photodiodes Integrated in a 0.18-μm CMOS Technology. Photonics Technology Letters, IEEE, 20, 2069-2071(2008).

[13] E Vilella, A Vilà, F Palacio et al. Characterization of linear-mode avalanche photodiodes in standard CMOS. Procedia Engineering, 87, 728-731(2014).

[14] Y C Hsieh, F P Chou, C W Wang et al. 850-nm edge-illuminated si photodiodes fabricated with CMOS-MEMS technology. IEEE Photonics Technology Letters, 25, 2018-2021(2013).

[15] G Ripoche, J Harari. Avalanche photodiodes. Optoelectronic sensors, 58-109(2009).

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Guo-Hao JU, Zheng-Xi CHENG, Yong-Ping CHEN. Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 668

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