Fig. 1. A schematic drawing of the process flow for the advanced heterogeneous integration by using regrowth on III-V-on-Si bonding template.
Fig. 2. Pictures of the fabricated InP-on-Si bonded wafers from HPE, III-V Lab and Sophia University. Figure repoduced with permisson from: (a) ref.
29, under a Creative Commons Attribution 4.0 International License; (b) ref.
31, (c) ref.
25, John Wiley and Sons.
Fig. 3. Epitaxial regrowth laser structures on bonded templates from HPE, III-V Lab and Sophia University. Figure repoduced with permisson from: (a) ref.
29, under a Creative Commons Attribution 4.0 International License; (b) ref.
32, (c) ref.
26, IEEE.
Fig. 4. AFM images and Nomarski microscope image of the epitaxial regrowth on bonded substrate from HPE, III-V Lab and Sophia University. Figure repoduced with permisson from: (a) ref.
29,under a Creative Commons Attribution 4.0 International License; (b) ref.
32, (c) ref.
26, IEEE.
Fig. 5. Cross-sectional TEM (or STEM) images of the MQW or bulk epitaxy on the bonded substrate from HPE and III-V Lab. Figure repoduced with permisson from: (a, b) ref.
29, under a Creative Commons Attribution 4.0 International License; (c) ref.
32, IEEE; (d) ref.
31, John Wiley and Sons.
Fig. 6. (
a) The electron channeling patterns corresponding to the three-beam (400) and (220) imaging conditions that were used in ECCI characterization. (
b) A representative ECCI image with only one TD. Figure repoduced with permisson from ref.
29, under a Creative Commons Attribution 4.0 International License.
Fig. 7. The PL measurements at room temperature for the epitaxy on both InP and the bonded substrate from HPE, III-V Lab and Sophia University. Figure repoduced with permisson from: (a) ref.
29, under a Creative Commons Attribution 4.0 International License; (b) ref.
32, (c) ref.
26, IEEE.
Fig. 8. XRD measurements on the epitaxy samples that from the three different research groups. Figure repoduced with permisson from: (a) ref.
29, under a Creative Commons Attribution 4.0 International License; (b) ref.
31, John Wiley and Sons; (c) ref.
27, Elsevier.
Fig. 9. (
a) A microscope image of a FP laser with hybrid facets. (
b) Schematic drawing of the device cross-section and (
c) SEM of the hybrid facet. (
d) RT pulsed LIV. (
e) Pulsed LI up to 40 °C (inset: mode profile at facets). (
f) Device spetrum. (
g) cw LI up to 25 °C. Figure repoduced with permisson from ref.
29, under a Creative Commons Attribution 4.0 International License.
Fig. 10. (
a) A microscope image of a FP laser with Si waveguide facets and a SEM image of a III/V-to-Si taper. (
b) RT pulsed LIV (inset: microscope image of the device), (
c) pulsed LI up to 40 °C (inset: mode profile at facets). Figure repoduced with permisson from ref.
29, under a Creative Commons Attribution 4.0 International License.
Fig. 11. (
a) SEM image of the fabricated FP laser on InP-on-Si substrate. (
b) J-L characteristics in pulse injection mode at 20 °C: laser on bonded substrate (solid line) and the laser on InP (dash line). (
c) J-L characteristics in pulse injection mode measured at different temperatures for the laser on bonded substrate. (
d) Threshold current density evolution against temperature for the laser on bonded substrate (blue) and on InP (red). Figure repoduced with permisson from ref.
32, IEEE.
Fig. 12. (
a) Measured lasing spectra of five FP lasers under C-W operation for a driving current of 100 mA at 20 °C. (
b−
d) L-I characteristics under C-W operation for different temperatures for the lasers emitting at 1515 nm, 1580 nm and 1635 nm. Figure repoduced with permisson from ref.
35, IEEE.
Fig. 13. (
a) A typical laser structure. (
b) The typical I-L characteristics of the MQW laser on the bonded substrate at various temperatures. (
c) A lasing spectrum for the MQW laser at an input current of
J=6.83 kA/cm
2. (
d) The temperature dependence of the threshold current density for the DH bulk lasers and MQW lasers on bonded substrates and on native substraes. Figure repoduced with permisson from: (a) ref.
26, IEEE; (b, c, d) ref.
27, Elsevier.
Research
group
| Bonding methods | Epitaxy characterizations | Laser performance | | Configuration | Surface
treatments
| Bonding
size
| Epitaxy
thickness
| Surface
roughness
| TDD
(cm2)
| threshold
current
densities
(A/cm2)
| Slope
efficiency
(W/A)
| Temperature
performance
| Other
features
| HPE | InP/SiO2/SOI
(patterned)
| SiO2 dep.,
O2 plasma
| 1/4 of 2 inch | >2 μm | 0.2 nm | 9.5 × 104 | 813
1125
(coupled to Si)
| 0.14 | Pulsed up to 40 °C
CW up to 20 °C
| Light coupled into
Si waveguide
| III-V lab | InP/SiO2/Si
| Thermal
Oxidized
SiO2 | 4 inch | 3 μm | 0.7 nm | - | 400 | 0.092 | CW up to 70 °C | Laser array
(with 5 lasers)
| Sophia University | InP/Si | H2SO4solution
| 2 inch | >2 μm | - | - | 1800 (DH)
6830 (MQW)
| - | Pulsed up 20 °C | Metal contact on
Si substrate
|
|
Table 1. A comparison of the main features in the demonstrations from the three research groups.
Unit laser area cost | Substrate material | III/V
epitaxy
| Fabrication | Packaging | Operation
(energy $)
| Approach | Si/SOI
(12 in)
| InP | Bonding | Device
fab
| x: low, xx: medium, xxx: high | Finished III/V chip packaged with Si39 | None | xxx (2–4 in) | xxx (2–4 in) | None | xxx (3 in) | xxx | xx | III/V wafer bonding on Si40 | x | xxx (2–4 in) | xxx (2–4 in) | xx | x (12 in) | x | x | III/V epitaxy on Si12-14 | x | None | xx (12 in) | None | x (12 in) | xxx | xx | Wafer bonding plus epitaxy | x | xxx (2–4 in, template epitaxy included) | x (12 in) | x | x (12 in) | x | x |
|
Table 2. Qualitative comparison of production and operation costs of the same diode laser built on different III/V-on-silicon integration approaches.