Researching | 1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

Journals >Photonics Research >Volume 6 >Issue 4 >Page 321 > Article

Photonics Research
Vol. 6, Issue 4, 321 (2018)

1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

Jun Wang^1、*, Haiyang Hu¹, Haiying Yin¹, Yiming Bai², Jian Li³, Xin Wei³, Yuanyuan Liu⁴, Yongqing Huang¹, Xiaomin Ren¹, and Huiyun Liu⁵

Author Affiliations

¹State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

²State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China

³Laboratory of Nano Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁴Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁵Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, UK

show less

DOI: 10.1364/PRJ.6.000321 Cite this Article Set citation alerts

Jun Wang, Haiyang Hu, Haiying Yin, Yiming Bai, Jian Li, Xin Wei, Yuanyuan Liu, Yongqing Huang, Xiaomin Ren, Huiyun Liu. 1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers[J]. Photonics Research, 2018, 6(4): 321 Copy Citation Text

show less

References

[1] A. Rickman. The commercialization of silicon photonics. Nat. Photonics, 8, 579-582(2014).

[2] M. Asghari, A. V. Krishnamoorthy. Silicon photonics: energy-efficient communication. Nat. Photonics, 5, 268-270(2011).

[3] Z. Wang, B. Tian, M. Pantouvaki, W. Guo, P. Absil, J. Campenhout, C. Merckling, D. Thourhout. Room-temperature InP distributed feedback laser array directly grown on silicon. Nat. Photonics, 9, 837-842(2015).

[4] S. G. Cloutier, P. A. Kossyrev, J. M. Xu. Optical gain and stimulated emission in periodic nanopatterned crystalline silicon. Nat. Mater., 4, 887-891(2005).

[5] A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Panicia, J. E. Bowers. Electrically pumped hybrid AlGaInAs-silicon evanescent laser. Opt. Express, 14, 9203-9210(2006).

[6] R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, J. Michel. An electrically pumped germanium laser. Opt. Express, 20, 11316-11320(2012).

[7] D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, D. Buca. Optically pumped GeSn microdisk lasers on Si. ACS Photon., 3, 1279-1285(2016).

[8] Z. Zhou, B. Yin, J. Michel. On-chip light sources for silicon photonics. Light Sci. Appl., 4, e358(2015).

[9] E. Tournié, L. Cerutti, J. B. Rodriguez, H. Liu, J. Wu, S. Chen. Metamorphic III-V semiconductor lasers grown on silicon. MRS Bull., 41, 218-223(2016).

[10] S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, H. Liu. Electrically pumped continuous-wave III-V quantum dot lasers on silicon. Nat. Photonics, 10, 307-311(2016).

[11] Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau. 1.3 μm submilliamp threshold quantum dot micro-lasers on Si. Optica, 4, 940-944(2017).

[12] D. Liang, J. E. Bowers. Recent progress in lasers on silicon. Nat. Photonics, 4, 511-517(2010).

[13] R. Chen, T. T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C. Chang-Hasnain. Nanolasers grown on silicon. Nat. Photonics, 5, 170-175(2011).

[14] A. Y. Liu, R. W. Herrick, O. Ueda, P. M. Petroff, A. C. Gossard, J. E. Bowers. Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon. IEEE J. Sel. Top. Quantum Electron., 21, 1900708(2015).

[15] J. Wang, X. Ren, C. Deng, H. Hu, Y. He, Z. Cheng, H. Ma, Q. Wang, Y. Huang, X. Duan, X. Yan. Extremely low-threshold current density InGaAs/AlGaAs quantum-well lasers on silicon. J. Lightwave Technol., 33, 3163-3169(2015).

[16] T. Wang, H. Liu, A. Lee, F. Pozzi, A. Seeds. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. Opt. Express, 19, 11381-11386(2011).

[17] A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, J. E. Bowers. High performance continuous wave 1.3 μm quantum dot lasers on silicon. Appl. Phys. Lett., 104, 041104(2014).

[18] D. Jung, J. Norman, M. J. Kennedy, C. Shang, B. Shin, Y. Wan, A. C. Gossard, J. E. Bowers. High efficiency low threshold current 1.3 μm InAs quantum dot lasers on-axis (001) GaP/Si. Appl. Phys. Lett., 111, 122107(2017).

[19] Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, K. M. Lau. Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. Opt. Lett., 41, 1664-1667(2016).

[20] J. Tatebayashi, M. Ishida, N. Hatori, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa. Lasing at 1.28 μm of InAs-GaAs quantum dots with AlGaAs cladding layer grown by metal-organic chemical vapor deposition. IEEE J. Sel. Top. Quantum Electron., 11, 1027-1034(2005).

[21] N. T. Yeh, W. S. Liu, S. H. Chen, P. C. Chiu, J. I. Chyi. InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy. Appl. Phys. Lett., 80, 535-537(2002).

[22] T. D. Park, J. S. Colton, J. K. Farrer, H. Yang, D. J. Kim. Annealing-induced change in quantum dot chain formation mechanism. AIP Adv., 4, 127142(2014).

[23] L. Song, H. Zhu, J. Pan, L. Zhao, W. Wang. Effect of annealing on optical properties of InAs quantum dots grown by MOCVD on GaAs (100) vicinal substrates. Chin. Phys. Lett., 22, 2692-2695(2005).

[24] K. M. Groom, B. J. Stevens, P. J. Assamoi, J. S. Roberts, M. Hugues, D. T. D. Childs, R. A. Hogg. Quantum well and dot self-aligned stripe lasers utilizing an InGaP optoelectronic confinement layer. IEEE J. Sel. Top. Quantum Electron., 15, 819-827(2009).

[25] F. Y. Chang, J. D. Lee, H. H. Lin. Low threshold current density 1.3 μm InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy. Electron. Lett., 40, 179-180(2004).

[26] J. Wang, H. Hu, Y. He, C. Deng, Q. Wang, X. Duan, Y. Huang, X. Ren. Defect reduction in GaAs/Si films with the a-Si buffer layer grown by metalorganic chemical vapor deposition. Chin. Phys. Lett., 32, 088101(2015).

[27] H. Hu, J. Wang, Y. He, K. Liu, Y. Liu, Q. Wang, X. Duan, Y. Huang, X. Ren. Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition. Appl. Phys. A, 122, 588(2016).

[28] J. Wang, H. Hu, C. Deng, Y. He, Q. Wang, X. Duan, Y. Huang, X. Ren. Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition. Chin. Phys. B, 24, 028101(2015).

[29] M. Tang, S. Chen, J. Wu, Q. Jiang, K. Kennedy, P. Jurczak, M. Liao, R. Beanland, A. Seeds, H. Liu. Optimizations of defect filter layers for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. IEEE J. Sel. Top. Quantum Electron., 22, 50-56(2016).

[30] T. Orzali, A. Vert, B. O’Brien, J. L. Herman, S. Vivekanand, R. J. W. Hill, Z. Karim, S. S. Papa Rao. GaAs on Si epitaxy by aspect ratio trapping: analysis and reduction of defects propagating along the trench direction. J. Appl. Phys., 118, 105307(2015).

[31] O. B. Shchekin, D. G. Deppe. Low-threshold high-to 1.3-μm InAs quantum-dot lasers due to P-type modulation doping of the active region. IEEE Photon. Technol. Lett., 14, 1231-1233(2002).

[32] R. R. Alexander, D. T. D. Childs, H. Agarwal, K. M. Groom, H. Liu, M. Hopkinson, R. A. Hogg, M. Ishida, T. Yamamoto, M. Sugawara, Y. Arakawa, T. J. Badcock, R. J. Royce, D. J. Mowbray. Systematic study of the effects of modulation p-doping on 1.3-μm quantum-dot lasers. IEEE J. Quantum Electron., 43, 1129-1139(2007).

CLP Journals

[1] Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability[J]. Photonics Research, 2018, 6(8): 776

Figures&Tables (7)

References (32)

Copy Citation Text

Jun Wang, Haiyang Hu, Haiying Yin, Yiming Bai, Jian Li, Xin Wei, Yuanyuan Liu, Yongqing Huang, Xiaomin Ren, Huiyun Liu. 1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers[J]. Photonics Research, 2018, 6(4): 321

Download Citation

Set citation alerts for the article

Set citation alerts for the article

Save the article for my favorites

Paper Information

Recommended Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology

Set citation alerts for the article

Please enter your email address