1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

Jun Wang; Haiyang Hu; Haiying Yin; Yiming Bai; Jian Li; Xin Wei; Yuanyuan Liu; Yongqing Huang; Xiaomin Ren; Huiyun Liu

doi:10.1364/PRJ.6.000321

Journals >Photonics Research >Volume 6 >Issue 4 >Page 321 > Article

Photonics Research
Vol. 6, Issue 4, 321 (2018)

1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

Jun Wang^1、*, Haiyang Hu¹, Haiying Yin¹, Yiming Bai², Jian Li³, Xin Wei³, Yuanyuan Liu⁴, Yongqing Huang¹, Xiaomin Ren¹, and Huiyun Liu⁵

Author Affiliations

¹State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

²State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China

³Laboratory of Nano Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁴Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁵Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, UK

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DOI: 10.1364/PRJ.6.000321 Cite this Article Set citation alerts

Jun Wang, Haiyang Hu, Haiying Yin, Yiming Bai, Jian Li, Xin Wei, Yuanyuan Liu, Yongqing Huang, Xiaomin Ren, Huiyun Liu. 1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers[J]. Photonics Research, 2018, 6(4): 321 Copy Citation Text

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