Jun Wang, Haiyang Hu, Haiying Yin, Yiming Bai, Jian Li, Xin Wei, Yuanyuan Liu, Yongqing Huang, Xiaomin Ren, Huiyun Liu. 1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers[J]. Photonics Research, 2018, 6(4): 321
- Photonics Research
- Vol. 6, Issue 4, 321 (2018)
Fig. 1. Schematic of the test structure of the QD active region on silicon.
Fig. 2. Room-temperature photoluminescence spectra of the samples with Ga 0.51 In 0.49 P
Fig. 3. (a) Schematic of the QD laser structure on Si with the GaInP upper cladding layer. (b) 1 μm × 1 μm
Fig. 4. Doping profile of the main laser structure grown on silicon.
Fig. 5. (a) Schematic of the device structure. (b) Cross-sectional SEM image of the part of a device structure.
Fig. 6. Light–current characteristics of a broad-stripe laser measured under CW condition at room temperature.
Fig. 7. L-I characteristics of the laser under CW conditions at different operation temperatures.
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