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Journals >Journal of Semiconductors >Volume 41 >Issue 3 >Page 032102 > Article

Journal of Semiconductors
Vol. 41, Issue 3, 032102 (2020)

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

Lin Luo, Jun Liu, Guofang Wang, and Yuxing Wu

Author Affiliations

Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

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DOI: 10.1088/1674-4926/41/3/032102 Cite this Article

Lin Luo, Jun Liu, Guofang Wang, Yuxing Wu. Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. Journal of Semiconductors, 2020, 41(3): 032102 Copy Citation Text

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Abstract

This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode. The extraction method for the proposed model is developed. A 2-gate switch structure is fabricated on a commercial 0.5 μm AlGaAs/GaAs pHEMT technology to verify the proposed model. Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

$ {\rm{Imag}}\left( {{Y_{11}}} \right) = j\omega \left( {{C_{{\rm{dp}}}} + {C_{{\rm{dsp}}}}} \right), $

(1)

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$ {\rm{Imag}}\left( {{Y_{12}}} \right) = {\rm{Imag}}\left( {{Y_{21}}} \right) = - j\omega {C_{{\rm{dsp}}}}, $

(2)

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$ {\rm{Imag}}\left( {{Y_{22}}} \right) = j\omega \left( {{C_{{\rm{sp}}}} + {C_{{\rm{dsp}}}}} \right), $

(3)

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$ {C_{{\rm{dp}}}} = {\rm{Imag}}\left( {{Y_{11}} + {Y_{12}}} \right)/\omega , $

(4)

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$ {C_{{\rm{sp}}}} = {\rm{Imag}}\left( {{Y_{22}} + {Y_{12}}} \right)/\omega , $

(5)

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$ {C_{{\rm{dsp}}}} = - {\rm{Imag}}\left( {{Y_{12}}} \right)/\omega . $

(6)

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$ {Z_{11}} = {R_{\rm{d}}} + \frac{{{R_{\rm{ds}}}}}{2} + {R_{\rm{g}}} + {R_{\rm{G}}} + j\left[\omega \left( {{L_{\rm{g}}} + {L_{\rm{d}}} - \frac{1}{{\omega {C_{\rm{b}}}}}} \right)\right], $

(7)

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$ {Z_{12}} = {Z_{21}} = {R_{\rm{g}}} + {R_{\rm{G}}} + j\left[ {\omega \left( {{L_{\rm{g}}} - \frac{1}{{\omega {C_{\rm{b}}}}}} \right)} \right], $

(8)

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$ {Z_{22}} = {R_{\rm{s}}} + \frac{{{R_{\rm{ds}}}}}{2} + {R_{\rm{g}}} + {R_{\rm{G}}} + j\left[\omega \left( {{L_{\rm{g}}} + {L_{\rm{s}}} - \frac{1}{{\omega {C_{\rm{b}}}}}} \right)\right]. $

(9)

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$ {C_{{\rm{gd}}}} = {C_{{\rm{gs}}}} = {C_{\rm{g}}}, \quad {R_{\rm{gd}}} = {R_{\rm{gs}}} = {R_{\rm{gds}}}. $

(10)

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$ {Y_{11}} = \frac{1}{{{R_{\rm{ds}}}}} + j\omega {C_{\rm{ds}}} + {Y_{\rm{tmp}}}, $

(11)

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$ {Y_{12}} = {Y_{21}} = - \frac{1}{{{R_{\rm{ds}}}}} - j\omega {C_{\rm{ds}}} - {Y_{\rm{tmp}}}, $

(12)

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$ {Y_{22}} = \frac{1}{{{R_{\rm{ds}}}}} + j\omega {C_{\rm{ds}}} + {Y_{\rm{tmp}}}. $

(13)

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$ {Y_{\rm{tmp}}} = \dfrac{1}{{2{R_{\rm{gds}}} + \dfrac{1}{{2j\omega {C_{\rm{g}}}}} + \dfrac{{\left( {2{R_{\rm{gds}}} + \dfrac{1}{{2j\omega {C_{\rm{g}}}}}} \right)\dfrac{1}{{j\omega C_{\rm{g{g}}^*}}}}}{{\left( {2{R_{\rm{gds}}} + \dfrac{1}{{2j\omega {C_{\rm{g}}}}}} \right) + \dfrac{1}{{j\omega C_{\rm{g{g}}^*}}}}}}}. $

(14)

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$ {Y_{11}} = - {Y_{12}} = - {Y_{21}} = - {Y_{22}}. $

(15)

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$ {\rm{Imag}}\left( {{Y_{11}}} \right) = j\omega \left( {{C_{\rm{gd}}} + {C_{\rm{ds}}}} \right), $

(16)

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$ {\rm{Imag}}\left( {{Y_{12}}} \right) = {\rm{Imag}}\left( {{Y_{21}}} \right) = - j\omega {C_{\rm{ds}}}, $

(17)

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$ {\rm{Imag}}\left( {{Y_{22}}} \right) = j\omega \left( {{C_{\rm{gs}}} + {C_{\rm{ds}}}} \right). $

(18)

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$ {\rm{Real}}\left( {{Y_{21}}} \right) = - \frac{1}{{{R_{\rm{ds}}}}}. $

(19)

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$ {\rm{Imag}}\left( {{Y_{12}}} \right) = - j\omega \left( {{C_{\rm{ds}}} + \frac{{\displaystyle\frac{1}{2}C_{\rm{g*}}\left( {\displaystyle\frac{1}{2}C_{\rm{g}} + C_{\rm{g{g}*}}} \right)}}{{\displaystyle\frac{1}{2}C_{\rm{g}} + \left( {\displaystyle\frac{1}{2}C_{\rm{g}} + C_{\rm{g{g}*}}} \right)}}} \right). $

(20)

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$ e = \dfrac{{\left| {{S_{\rm{simu}}}\left( i \right) - {S_{\rm{meas}}}\left( i \right)} \right|}}{{\sqrt {\dfrac{{\sum\nolimits_n {{{\left( {{S_{\rm{meas}}}\left( i \right)} \right)}^2}} }}{n}} }}, $

(21)

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Lin Luo, Jun Liu, Guofang Wang, Yuxing Wu. Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. Journal of Semiconductors, 2020, 41(3): 032102

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