• Laser & Optoelectronics Progress
  • Vol. 59, Issue 9, 0922014 (2022)
Jingyuan Fu, Rui Su*, Xiaodong Ruan, and Xin Fu
Author Affiliations
  • State Key Laboratory of Fluid Power & Mechatronic Systems, Zhejiang University, Hangzhou 310058, Zhejiang , China
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    DOI: 10.3788/LOP202259.0922014 Cite this Article Set citation alerts
    Jingyuan Fu, Rui Su, Xiaodong Ruan, Xin Fu. Research Status and Progress of Contamination Control in Immersion Liquid System of Immersion Lithography Machine[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922014 Copy Citation Text show less
    Comparison of dry lithography and immersion lithography[8]
    Fig. 1. Comparison of dry lithography and immersion lithography[8]
    Schematic diagrams of key components of lithography immersion system. (a) Immersion nozzle; (b) immersion unit
    Fig. 2. Schematic diagrams of key components of lithography immersion system. (a) Immersion nozzle; (b) immersion unit
    Schematic diagram of immersion lithography scanning in the opposed flow configuration[19]
    Fig. 3. Schematic diagram of immersion lithography scanning in the opposed flow configuration[19]
    SEM images of wafer surface under different processing conditions. (a) Wetting before exposure (size is 5 μm); (b) wetting after exposure (size is 0.8 μm); (c) wetting after exposure (size is 1.5 μm); (d) wetting after exposure (size is 2.5 μm)[38]
    Fig. 4. SEM images of wafer surface under different processing conditions. (a) Wetting before exposure (size is 5 μm); (b) wetting after exposure (size is 0.8 μm); (c) wetting after exposure (size is 1.5 μm); (d) wetting after exposure (size is 2.5 μm)[38]
    Aggregation mechanism of air impurities[42]
    Fig. 5. Aggregation mechanism of air impurities[42]
    Transfer mechanism of particles on the topcoat to the resist after topcoat removal[21]
    Fig. 6. Transfer mechanism of particles on the topcoat to the resist after topcoat removal[21]
    Carboxylation of photoresist resin due to exposure[56]
    Fig. 7. Carboxylation of photoresist resin due to exposure[56]
    Estimated origins and mechanism of resist immersion defects[59]
    Fig. 8. Estimated origins and mechanism of resist immersion defects[59]
    Bubble chart of analytical resolution vs detection limit[62]
    Fig. 9. Bubble chart of analytical resolution vs detection limit[62]
    Basic structure of the AS7 cleaning system[76]
    Fig. 10. Basic structure of the AS7 cleaning system[76]
    Normal immersed lithographic exposure routing and 2 defect-reducing special routings[89]
    Fig. 11. Normal immersed lithographic exposure routing and 2 defect-reducing special routings[89]
    Preparation process of polarity-changed polymeric resist materials[92]
    Fig. 12. Preparation process of polarity-changed polymeric resist materials[92]
    Hydrophobic modification of objective lens coated surface[48]
    Fig. 13. Hydrophobic modification of objective lens coated surface[48]
    Jingyuan Fu, Rui Su, Xiaodong Ruan, Xin Fu. Research Status and Progress of Contamination Control in Immersion Liquid System of Immersion Lithography Machine[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922014
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