Jing-Hua SUN, Wen-Juan WANG, Yi-Cheng ZHU, Zi-Lu GUO, Yu-Fei QI, Wei-Ming XU. Effects of Gamma irradiation on performance of InGaAsP/InP single-photon avalanche diodes[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 44
- Journal of Infrared and Millimeter Waves
- Vol. 43, Issue 1, 44 (2024)
Fig. 1. Schematic of a TO-66 packaged InGaAsP/InP single-photon avalanche diode (SPAD): (a) Cross-sectional schematic of the InGaAsP/InP APD structure; (b)APD chip; (c) Physical appearance
Fig. 2. Schematic diagram of gated-mode single-photon detection system
Fig. 3. Dark current before and after irradiation: (a) Device 1#; (b) Device 2#
Fig. 4. Results of the dark current by in-situ test（Device 3#）
Fig. 5. Dark current before and after irradiation: (a) Device 4; (b) Device 5
Fig. 6. Change of the dark current increment before and after irradiation for Device 5#
Fig. 7. PDEs of APDs before and after irradiation: (a) Device 1#; (b) Device 2#; (c) Device 4#; (d) Device 5#
Fig. 8. PDEs of APPs before and after irradiation: (a) Device 1#; (b) Device 2#; (c) Device 4#; (d) Device 5#
Fig. 9. DCRs of APPs before and after irradiation: (a) Device 1#; (b) Device 2#; (c) Device 4#; (d) Device 5#
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Table 1. Summary of Irradiation Conditions
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Table 2. Change of DCR after irradiation at 40% PDE
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