• Journal of Semiconductors
  • Vol. 43, Issue 8, 082301 (2022)
Tianjiang He1、2, Suping Liu1、*, Wei Li1, Cong Xiong1, Nan Lin1、2, Li Zhong1、2, and Xiaoyu Ma1、2
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.1088/1674-4926/43/8/082301 Cite this Article
    Tianjiang He, Suping Liu, Wei Li, Cong Xiong, Nan Lin, Li Zhong, Xiaoyu Ma. Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer[J]. Journal of Semiconductors, 2022, 43(8): 082301 Copy Citation Text show less
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    Tianjiang He, Suping Liu, Wei Li, Cong Xiong, Nan Lin, Li Zhong, Xiaoyu Ma. Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer[J]. Journal of Semiconductors, 2022, 43(8): 082301
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