Tianjiang He, Suping Liu, Wei Li, Cong Xiong, Nan Lin, Li Zhong, Xiaoyu Ma. Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer[J]. Journal of Semiconductors, 2022, 43(8): 082301
- Journal of Semiconductors
- Vol. 43, Issue 8, 082301 (2022)
Fig. 1. (Color online) Variation of Al component concentration with diffusion distance.
Fig. 2. (Color online) Variation of quantum well gain spectrum peaks with Al atom diffusion distances.
Fig. 3. (Color online) The relationship between the interdiffusion coefficient of group III atoms and temperature.
Fig. 4. (Color online) Schematic diagram of GaInP/AlGaInP QW semiconductor laser
Fig. 5. (Color online) PL spectrum of GaInP/AlGaInP quantum well laser. (a) The mapping results of PL testing. (b) PL spectrum of epitaxial layer.
Fig. 6. (Color online) ECV test results of GaInP/AlGaInP quantum well epitaxial layer.
Fig. 7. The process of lift-off technique.
Fig. 8. (Color online) Sample surface after annealing at 580 °C/10 min.
Fig. 9. The PL spectrum under the annealing condition of 580 °C/10 min.
Fig. 10. (Color online) Schematic diagram after growing Si–Si3N4 composited dielectric layers.
Fig. 11. (Color online) The PL spectra at different annealing temperatures.
Fig. 12. (Color online) ECV test result of the sample annealed at 580 °C/10 min.
Fig. 13. (Color online) The PL spectra of the samples after annealing different cycles.
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Table 1. Stress between dielectric layers.
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