• Acta Optica Sinica
  • Vol. 41, Issue 1, 0114004 (2021)
Yi Zhang1、2, Cheng'ao Yang1、2, Jinming Shang1、2, Yihang Chen1、2, Tianfang Wang1、2, Yu Zhang1、2、*, Yingqiang Xu1、2, Bing Liu3、**, and Zhichuan Niu1、2、3、***
Author Affiliations
  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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    DOI: 10.3788/AOS202141.0114004 Cite this Article Set citation alerts
    Yi Zhang, Cheng'ao Yang, Jinming Shang, Yihang Chen, Tianfang Wang, Yu Zhang, Yingqiang Xu, Bing Liu, Zhichuan Niu. Research Progress of Semiconductor Interband Cascade Lasers[J]. Acta Optica Sinica, 2021, 41(1): 0114004 Copy Citation Text show less
    Absorption peaks of various gases[8]
    Fig. 1. Absorption peaks of various gases[8]
    Energy band diagram of quantum well cascade laser[39]
    Fig. 2. Energy band diagram of quantum well cascade laser[39]
    Conduction band and energy level of 3 μm QCL[59]
    Fig. 3. Conduction band and energy level of 3 μm QCL[59]
    Energy band diagram of active region of early time ICL[64]
    Fig. 4. Energy band diagram of active region of early time ICL[64]
    Energy band diagram of active region of ICL[102]
    Fig. 5. Energy band diagram of active region of ICL[102]
    Current-output power curves for the ICL of NRL[115]
    Fig. 6. Current-output power curves for the ICL of NRL[115]
    Emission spectra for the ICL of NRL[115]
    Fig. 7. Emission spectra for the ICL of NRL[115]
    Full structure diagram of the interband cascade laser[61]
    Fig. 8. Full structure diagram of the interband cascade laser[61]
    Energy band diagram of interband cascade laser with transition layer[109]
    Fig. 9. Energy band diagram of interband cascade laser with transition layer[109]
    Energy band diagram of cascade region of ICL[61]
    Fig. 10. Energy band diagram of cascade region of ICL[61]
    Energy gap, energy band edge, and lattice constant of InAs, GaSb, and AlSb[120]
    Fig. 11. Energy gap, energy band edge, and lattice constant of InAs, GaSb, and AlSb[120]
    Relationship between threshold current and temperature for short injection zone design[109]
    Fig. 12. Relationship between threshold current and temperature for short injection zone design[109]
    Energy band and carrier distributions of rebalancing of carriers[102]. (a) Electron injection zone with medium doping concentration of 4×1017 cm-3; (b) electron injection zone with heavy doping concentration of 5×1018 cm-3
    Fig. 13. Energy band and carrier distributions of rebalancing of carriers[102]. (a) Electron injection zone with medium doping concentration of 4×1017 cm-3; (b) electron injection zone with heavy doping concentration of 5×1018 cm-3
    Refractive index and optical TE mode distribution of SCL at 800 nm in 7 cascade regions[115]
    Fig. 14. Refractive index and optical TE mode distribution of SCL at 800 nm in 7 cascade regions[115]
    Optical confinement factor for active region, waveguide cladding, separate confinement layers, and transition layer[115]
    Fig. 15. Optical confinement factor for active region, waveguide cladding, separate confinement layers, and transition layer[115]
    10 μm×10 μm atomic force microscope photo of interband cascade laser[61]
    Fig. 16. 10 μm×10 μm atomic force microscope photo of interband cascade laser[61]
    HR-XRD[004] diffraction curve of ICL[61]
    Fig. 17. HR-XRD[004] diffraction curve of ICL[61]
    SEM sidewall topography of an interband cascade laser with seven cascade cycles. (a) Methane-based etching;(b) BCl3-based etching[126]
    Fig. 18. SEM sidewall topography of an interband cascade laser with seven cascade cycles. (a) Methane-based etching;(b) BCl3-based etching[126]
    Yi Zhang, Cheng'ao Yang, Jinming Shang, Yihang Chen, Tianfang Wang, Yu Zhang, Yingqiang Xu, Bing Liu, Zhichuan Niu. Research Progress of Semiconductor Interband Cascade Lasers[J]. Acta Optica Sinica, 2021, 41(1): 0114004
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