• Laser & Optoelectronics Progress
  • Vol. 57, Issue 1, 011403 (2020)
Peiying Bian1、* and Enhuai Yin2
Author Affiliations
  • 1Shaanxi Key Laboratory of Surface Engineering and Remanufacturing, Xi'an Key Laboratory on Intelligent Additive Manufacturing Technologies, Xi'an University, Xi'an, Shaanxi 710065, China
  • 2The 20th Research Institute of China Electronics Technology Group Corporation, Xi'an, Shaanxi 710068, China
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    DOI: 10.3788/LOP57.011403 Cite this Article Set citation alerts
    Peiying Bian, Enhuai Yin. Effect of Laser Power for Metal Selective Laser Melting on Morphology of 316L Stainless Steel Molten Pool and Residual Stress[J]. Laser & Optoelectronics Progress, 2020, 57(1): 011403 Copy Citation Text show less

    Abstract

    Considering the influence of matching of process parameters in selective laser melting (SLM) on forming quality, we choose three laser powers and conduct experiments at different scanning speeds and scan modes. The effect of laser power on the morphology of molten pool and residual stress is studied. Results show that an increase in the laser power leads to a corresponding increment in residual stress on formed parts and size of the molten pool. The main reason is that the heat flux density increases with the increasing laser power, the temperature gradient increases under the same thickness and cross section, and the temperature of the molten pool and its size increase. This results in a large interphase angle between crystal faces and large spacing between grain boundaries of different formed parts. It also results in excessive residual stress after cooling and solidification of the formed part corresponding to great thermal stress. Therefore, the thermal and residual stresses can be decreased by rationally selecting and matching the process parameters. Consequently, high-quality SLM parts can be produced.
    Peiying Bian, Enhuai Yin. Effect of Laser Power for Metal Selective Laser Melting on Morphology of 316L Stainless Steel Molten Pool and Residual Stress[J]. Laser & Optoelectronics Progress, 2020, 57(1): 011403
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