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    Journals >Acta Optica Sinica >Volume 40 >Issue 21 >Page 2122001 > Article
    • Acta Optica Sinica
    • Vol. 40, Issue 21, 2122001 (2020)
    Critical Pattern Selection Based on Diffraction Spectrum Analysis for Full-Chip Source Mask Optimization
    Lufeng Liao1、2, Sikun Li1、2、*, Xiangzhao Wang1、2、**, Libin Zhang2、3, Shuang Zhang2、3, Pengzheng Gao2、3, Yayi Wei2、3, and Weijie Shi4
    Author Affiliations
  • 1Laboratory of Information Optics and Opto-Electronic Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Integrated Circuit Advanced Process R & D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
  • 4Dongfang Jingyuan Electron Limited, Beijing 100176, China
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    DOI: 10.3788/AOS202040.2122001 Cite this Article Set citation alerts
    Lufeng Liao, Sikun Li, Xiangzhao Wang, Libin Zhang, Shuang Zhang, Pengzheng Gao, Yayi Wei, Weijie Shi. Critical Pattern Selection Based on Diffraction Spectrum Analysis for Full-Chip Source Mask Optimization[J]. Acta Optica Sinica, 2020, 40(21): 2122001 Copy Citation Text show less
    Extraction principle of critical frequency of pattern. (a) Non-array pattern; (b) array pattern
    Fig. 1. Extraction principle of critical frequency of pattern. (a) Non-array pattern; (b) array pattern
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    Schematic diagram of critical frequency. (a) Critical frequency's contour on the frequency plane; (b) description method for critical frequency of our method; (c) description method for critical frequency of ASML Tachyon method
    Fig. 2. Schematic diagram of critical frequency. (a) Critical frequency's contour on the frequency plane; (b) description method for critical frequency of our method; (c) description method for critical frequency of ASML Tachyon method
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    Schematic diagram of the coverage relationship between critical frequencies
    Fig. 3. Schematic diagram of the coverage relationship between critical frequencies
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    Flow chart of the critical frequency grouping method
    Fig. 4. Flow chart of the critical frequency grouping method
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    Flow chart of the critical pattern selection method
    Fig. 5. Flow chart of the critical pattern selection method
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    Critical pattern selection result of our method (pattern set A, repeating case)
    Fig. 6. Critical pattern selection result of our method (pattern set A, repeating case)
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    Critical pattern selection result of ASML Tachyon method (pattern set A, repeating case)
    Fig. 7. Critical pattern selection result of ASML Tachyon method (pattern set A, repeating case)
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    Optimized sources obtained after SMO is performed on two methods' critical pattern selection results. (a) Our method; (b) ASML Tachyon method (pattern set A, repeating case)
    Fig. 8. Optimized sources obtained after SMO is performed on two methods' critical pattern selection results. (a) Our method; (b) ASML Tachyon method (pattern set A, repeating case)
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    Process windows obtained after MO is performed on all patterns by using the two sources. (a) Common process windows; (b) EL versus DOF curves (pattern set A, repeating case)
    Fig. 9. Process windows obtained after MO is performed on all patterns by using the two sources. (a) Common process windows; (b) EL versus DOF curves (pattern set A, repeating case)
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    Critical pattern selection result of our method (pattern set A, unrepeating case)
    Fig. 10. Critical pattern selection result of our method (pattern set A, unrepeating case)
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    Critical pattern selection result of ASML Tachyon method (pattern set A, unrepeating case)
    Fig. 11. Critical pattern selection result of ASML Tachyon method (pattern set A, unrepeating case)
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    Optimized sources obtained after SMO is performed on critical pattern selection results. (a) Our method; (b) ASML Tachyon method (pattern set A, unrepeating case)
    Fig. 12. Optimized sources obtained after SMO is performed on critical pattern selection results. (a) Our method; (b) ASML Tachyon method (pattern set A, unrepeating case)
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    Process windows obtained after MO is performed on all patterns by using the two sources. (a) Common process windows; (b) EL versus DOF curves (pattern set A, unrepeating case)
    Fig. 13. Process windows obtained after MO is performed on all patterns by using the two sources. (a) Common process windows; (b) EL versus DOF curves (pattern set A, unrepeating case)
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    Critical patterns obtained by two methods (pattern set B)
    Fig. 14. Critical patterns obtained by two methods (pattern set B)
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    Simulation results (pattern set B)
    Fig. 15. Simulation results (pattern set B)
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    ParameterSpecification
    Lithography toolNXT:1950i
    Sourcefreeform
    PolarizationXY polarization
    Maskbinary/dark field
    Table 1. Simulation setting
    MethodDOF /nmMaximum MEEF(H/V)Worst ILS
    Our method71.023.70/3.6815.46
    ASML Tachyon71.324.37/4.3915.08
    Table 2. DOF, maximum MEEF and worst ILS obtained by the two methods (pattern set A, repeating case)
    MethodDOF /nmMaximum MEEF(H/V)Worst ILS
    Our method72.724.52/3.8215.23
    ASML Tachyon63.324.22/3.6615.16
    Table 3. DOF, maximum MEEF and worst ILS obtained by the two methods (pattern set A, unrepeating case)
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    Lufeng Liao, Sikun Li, Xiangzhao Wang, Libin Zhang, Shuang Zhang, Pengzheng Gao, Yayi Wei, Weijie Shi. Critical Pattern Selection Based on Diffraction Spectrum Analysis for Full-Chip Source Mask Optimization[J]. Acta Optica Sinica, 2020, 40(21): 2122001
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