• Journal of Semiconductors
  • Vol. 41, Issue 4, 042602 (2020)
Guozhen Shen1、2, Haoran Chen1、2, and Zheng Lou1
Author Affiliations
  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • show less
    DOI: 10.1088/1674-4926/41/4/042602 Cite this Article
    Guozhen Shen, Haoran Chen, Zheng Lou. Growth of aligned SnS nanowire arrays for near infrared photodetectors[J]. Journal of Semiconductors, 2020, 41(4): 042602 Copy Citation Text show less
    References

    [1] V Steinmann, R Jaramillo, K Hartman et al. 3.88% efficient tin sulfide solar cells using congruent thermal evaporation. Adv Mater, 26, 7488(2014).

    [2] L Zhao, G Tan, S Hao et al. Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe. Science, 351, 141(2016).

    [3] T Rath, L Gury, I Sanchez-Molina et al. Formation of porous SnS nanoplate networks from solution and their application in hybrid solar cells. Chem Commun, 51, 10198(2015).

    [4] G M Kumar, X Fu, P Ilanchezhiyan et al. Highly sensitive flexible photodetectors based on self-assembled tin monosulfide nanoflakes with graphene electrodes. ACS Appl Mater Interface, 9, 32142(2017).

    [5] Y Lin, X Wen, L Wang et al. Structure and optical properties of SnS nanowire arrays prepared with two-step method. Adv Mater Res, 476, 1519(2012).

    [6] X Zhou, L Gan, Q Zhang et al. High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition. J Mater Chem C, 4, 2111(2016).

    [7] D Zheng, H Fang, M Long et al. High-performance near-infrared photodetectors based on p-type SnX (X = S, Se) nanowires grown via chemical vapor deposition. ACS Nano, 12, 7239(2018).

    [8] J Chao, Z Wang, X Xu et al. Tin sulfide nanoribbons as high performance photoelectrochemical cells, flexible photodetectors and visible-light-driven photocatalysts. RSC Adv, 3, 2746(2013).

    [9] Z Zhang, J Yang, K Zhang et al. Anisotropic photoresponse of layered 2D SnS-based near infrared photodetectors. J Mater Chem C, 5, 11288(2017).

    [10] Z Deng, D Cao, J He et al. Solution synthesis of ultrathin single-crystalline SnS nanoribbons for photodetectors via phase transition and surface processing. ACS Nano, 6, 6197(2012).

    [11] L Ning, T Jiang, Z Shao et al. Light-trapping enhanced ZnO-MoS2 core-shell nanopillar arrays for broadband ultraviolet-visible-near infrared photodetection. J Mater Chem C, 6, 7077(2018).

    [12] D Zhang, L Gu, Q Zhang et al. Increasing photoluminescence quantum yield by nanophotonic design of quantum-confined halide perovskite nanowire arrays. Nano Lett, 19, 2850(2019).

    [13] L Gu, M M Tavakoli, D Zhang et al. 3D arrays of 1024-pixel image sensors based on lead halide perovskite nanowires. Adv Mater, 28, 9713(2016).

    [14] Z Fan, R Kapadia, P Leu et al. Ordered arrays of dual-diameter nanopillars for maximized optical absorption. Nano Lett, 10, 3823(2010).

    [15] Z Fan, H Razzavi, J Do et al. Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrate. Nat Mater, 8, 648(2009).

    [16] X Duan, C M Lieber. General synthesis of compound semiconductor nanowires. Adv Mater, 12, 298(2000).

    [17] Y Wu, g P Yang. Direct observation of vapor-liquid-solid nanowire growth. J Am Chem Soc, 123, 3165(2001).

    [18] G Shen, J Xu, X Wang et al. Growth of directly transferrable In2O3 nanowire mats for transparent thin-film transistors applications. Adv Mater, 23, 771(2011).

    [19] T Luo, B Liang, Z Liu et al. Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response. Sci Bull, 60, 101(2015).

    [20] T Duan, Z Lou, G Shen. Electrical transport and photoresponse properties of single-crystalline Cd3As2 nanowires. Sci China-Phys Mech Astron, 58, 027801(2015).

    [21] L Li, Z Lou, G Shen. Flexible broadband image sensors with SnS quantum dots/Zn2SnO4 nanowires hybrid nanostructures. Adv Funct Mater, 18, 1705389(2018).

    [22] S Chen, Z Lou, D Chen et al. Printble Zn2GeO4 microwires based flexible photodetectors with tunable photorespone. Adv Mater Technol, 3, 1800050(2018).

    [23] Z Lou, L Li, G Shen. InGaO3(ZnO) superlattice nanowires for high performance ultraviolet photodetectors. Adv Electron Mater, 1, 1500054(2015).

    [24] Z Lou, X L Yang, H R Chen et al. Flexible ultraviolet photodetectors based on ZnO–SnO2 heterojunction nanowire arrays. J Semicond, 39, 024002(2018).

    [25] G Chen, B Liang, X Liu et al. High-performance hybrid phenyl-C61-butyric acid methyl ester/Cd3P2 nanowire ultraviolet-visible-near infrared photodetectors. ACS Nano, 8, 787(2014).

    [26] Z Lou, L Li, G Shen. Ultraviolet/visible photodetectors with ultrafast, high photosensitivity based on 1D ZnS/CdS heterostructures. Nanoscale, 8, 5219(2016).

    [27] R Chai, Z Lou, G Shen. Highly flexible self-powered photodetectors based on core-shell Sb/CdS nanowires. J Mater Chem C, 7, 4581(2019).

    [28] Z Liu, T Luo, B Liang et al. High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared. Nano Res, 6, 775(2013).

    [29] X Gong, M Tong, Y Xia et al. High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm. Science, 325, 1665(2009).

    [30] J Miao, W Hu, N Guo et al. Single InAs nanowire room temperature near-infrared photodetectors. ACS Nano, 8, 3628(2014).

    [31] B Ouyang, K Zhang, Y Yang et al. Photocurrent polarity controlled by light wavelength in self-powered ZnO nanowires/SnS photodetector system. iScience, 1, 16(2018).

    [32] G Chen, B Liang, Z Liu et al. High performance rigid and flexible visible-light photodetectors based on aligned X(In,Ga)P nanowire arrays. J Mater Chem C, 2, 1270(2014).

    Guozhen Shen, Haoran Chen, Zheng Lou. Growth of aligned SnS nanowire arrays for near infrared photodetectors[J]. Journal of Semiconductors, 2020, 41(4): 042602
    Download Citation