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Chinese Optics Letters
Vol. 15, Issue 6, 062401 (2017)

Optical rectification and Pockels effect as a method to detect the properties of Si surfaces

Qi Wang¹, Li Zhang¹, Xin Wang¹, Haiyan Quan¹, Zhanguo Chen^1、*, Jihong Zhao¹, Xiuhuan Liu², Lixin Hou³, Yanjun Gao¹, Gang Jia¹, and Shaowu Chen⁴

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

²College of Communication Engineering, Jilin University, Changchun 130012, China

³College of Information Technology, Jilin Agricultural University, Changchun 130118, China

⁴State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.3788/COL201715.062401 Cite this Article Set citation alerts

Qi Wang, Li Zhang, Xin Wang, Haiyan Quan, Zhanguo Chen, Jihong Zhao, Xiuhuan Liu, Lixin Hou, Yanjun Gao, Gang Jia, Shaowu Chen. Optical rectification and Pockels effect as a method to detect the properties of Si surfaces[J]. Chinese Optics Letters, 2017, 15(6): 062401 Copy Citation Text

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References

[1] A. Rice, Y. Jin, X. F. Ma, X. C. Zhang, D. Bliss, J. Larkin, M. Alexander. Appl. Phys. Lett., 64, 1324(1994).

[2] S. Kumar, R. Kishor Singh, R. P. Sharma. Europhys. Lett., 114, 55003(2016).

[3] H. Li, L. Bi, R. Wang, L. J. Li, Z. Chunxi. J. Lightwave Technol., 31, 1921(2013).

[4] H. Li, L. Y. Cui, Z. L. Lin. J. Lightwave Technol., 32, 1006(2014).

[5] J. E. Sipe, D. J. Moss, H. M. van Driel. Phys. Rev. B, 35, 1129(1987).

[6] R. S. Jacobson, K. N. Andersen, P. I. Borel, J. F. Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, A. Bjarklev. Nature, 441, 199(2006).

[7] J.-H. Zhao, Q.-D. Chen, Z.-G. Chen, G. Jia, W. Su, Y. Jiang, Z.-X. Yan, T. V. Dolgova, O. A. Aktsipetrov, H.-B. Sun. Opt. Lett., 34, 3340(2009).

[8] M. Cazzanelli, F. Bianco, E. Borga, G. Pucker, M. Ghulinyan, E. Degoli, E. Luppi, V. Véniard, S. Ossicini, D. Modotto, S. Wabnitz, R. Pierobon, L. Pavesi. Nat. Mater., 11, 148(2012).

[9] J.-H. Zhao, B.-W. Cheng, Q.-D. Chen, W. Su, Y. Jiang, Z.-G. Chen, G. Jia, H.-B. Sun. IEEE Photon. J., 2, 974(2010).

[10] J. H. Zhao, X. H. Li, Z. G. Chen, X. Meng, G. Jia. J. Opt. Soc. Am. B, 30, 1200(2013).

[11] C. H. Lee, R. K. Chang, N. Bloembergen. Phys. Rev. Lett., 18, 167(1967).

[12] C. K. Chen, A. R. B. de Castro, Y. R. Shen. Phys. Rev. Lett., 46, 145(1981).

[13] Z. Chen, J. Zhao, Y. Zhang, G. Jia, X. Liu, C. Ren, W. Wu, J. Sun, K. Cao, S. Wang, B. Shi. Appl. Phys. Lett., 92, 251111(2008).

[14] J. Zhu, Z. Chen, X. Liu, Y. Gao, J. Mu, Z. Wang, W. Han, G. Jia. Opt. Laser Technol., 44, 582(2012).

[15] Q. Wang, H. Zhang, N. Liu, B. Zhao, X. Liu, L. Hou, Y. Gao, G. Jia, Z. Chen. Chin. Opt. Lett., 14, 012301(2016).

[16] P. Godefroy, W. de Jong, C. W. van Hasselt, M. A. C. Devillers, T. Rasing. Appl. Phys. Lett., 68, 1981(1996).

[17] O. A. Aktsipetrov, A. A. Fedyanin, V. N. Golovkina, T. V. Murzina. Opt. Lett., 19, 1450(1994).

[18] C. Reitböck, D. Stifter, A. Alejo-Molina, K. Hingerl, H. Hardhienata. J. Opt., 18, 035501(2016).

[19] O. A. Aktsipetrov, A. A. Fedyanin, E. D. Mishina, A. N. Rubtsov. Phys. Rev. B, 54, 1825(1996).

[20] O. A. Aktsipetrov, A. A. Fedyanin, A. V. Melnikov, E. D. Mishina, A. N. Rubtsov, M. H. Anderson, P. T. Wilson, M. Beek, X. F. Hu, J. I. Dadap, M. C. Downer. Phys. Rev. B, 60, 8924(1999).

[21] W. Daum. Appl. Phys. A, 87, 451(2007).

[22] T. Scheidt, E. G. Rohwer, P. Neethling, H. M. von Bergmann, H. Stafast. J. Appl. Phys., 104, 083712(2008).

[23] J. I. Dadap, P. T. Wilson, M. H. Anderson, M. C. Downer. Opt. Lett., 22, 901(1997).

[24] O. A. Aktsipetrov, A. A. Fedyanin, A. V. Melnikov, J. I. Dadap, X. F. Hu, M. H. Anderson, M. C. Downer, J. K. Lowell. Thin Solid Films, 294, 231(1997).

[25] C. Ohlhoff, C. Meyer, G. Lüpke, T. Löffler, T. Pfeifer, H. G. Roskos, H. Kurz. Appl. Phys. Lett., 68, 1699(1996).

[26] D. Xiao, E. Ramsay, D. T. Reid, B. Offenbeck, N. Weber. Appl. Phys. Lett., 88, 114107(2006).

[27] C. Schriever, F. Bianco, M. Cazzanelli, M. Ghulinyan, C. Eisenschmidt, J. de Boor, A. Schmid, J. Heitmann, L. Pavesi, J. Schilling. Adv. Opt. Mater., 3, 129(2015).

[28] S. M. Sze, K. K. Ng. Physics of Semiconductor Devices(2007).

[29] J. Zhu, Z. Chen, X. Liu, J. Mu, Y. Gao, W. Han, G. Jia. Chin. Opt. Lett., 10, 082301(2012).

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Qi Wang, Li Zhang, Xin Wang, Haiyan Quan, Zhanguo Chen, Jihong Zhao, Xiuhuan Liu, Lixin Hou, Yanjun Gao, Gang Jia, Shaowu Chen. Optical rectification and Pockels effect as a method to detect the properties of Si surfaces[J]. Chinese Optics Letters, 2017, 15(6): 062401

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