Optical rectification and Pockels effect as a method to detect the properties of Si surfaces

Qi Wang; Li Zhang; Xin Wang; Haiyan Quan; Zhanguo Chen; Jihong Zhao; Xiuhuan Liu; Lixin Hou; Yanjun Gao; Gang Jia; Shaowu Chen

doi:10.3788/COL201715.062401

Journals >Chinese Optics Letters >Volume 15 >Issue 6 >Page 062401 > Article

Chinese Optics Letters
Vol. 15, Issue 6, 062401 (2017)

Optical rectification and Pockels effect as a method to detect the properties of Si surfaces

Qi Wang¹, Li Zhang¹, Xin Wang¹, Haiyan Quan¹..., Zhanguo Chen^1,*, Jihong Zhao¹, Xiuhuan Liu², Lixin Hou³, Yanjun Gao¹, Gang Jia¹ and Shaowu Chen⁴|Show fewer author(s)

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

²College of Communication Engineering, Jilin University, Changchun 130012, China

³College of Information Technology, Jilin Agricultural University, Changchun 130118, China

⁴State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.3788/COL201715.062401 Cite this Article Set citation alerts

Qi Wang, Li Zhang, Xin Wang, Haiyan Quan, Zhanguo Chen, Jihong Zhao, Xiuhuan Liu, Lixin Hou, Yanjun Gao, Gang Jia, Shaowu Chen, "Optical rectification and Pockels effect as a method to detect the properties of Si surfaces," Chin. Opt. Lett. 15, 062401 (2017) Copy Citation Text

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Abstract

The depth profile of electric-field-induced (EFI) optical rectification (OR) and EFI Pockels effect (PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.