Fig. 1. Orientations of the Si(110) crystal.

Fig. 2. Anisotropy of EFI OR in the Si(110) surface layers.

Fig. 3. Relative shift between the sample and the laser spot.

Fig. 4. Distribution of EFI OR signals along the depth direction in the Si(110) crystal. The experimental results (a) before and (b) after reversing the two {110} surfaces of the Si crystal are in good accordance. The blue solid lines are the theoretical simulation curves.

Fig. 5. EFI PE signals in (a) the No. 1 surface layer and (b) the No. 2 surface layer of the Si(110) crystal.

Fig. 6. (a) Band structure of the Si(110) crystal after contact with the Al electrodes. (b) Distribution of the built-in electric field in the SCR of the Si surface layers. The dashed lines represent the boundary of the SCR.

Fig. 7. Intensity distribution of the Gaussian beam on the z axis and the overlap of the Gaussian beam and the SCR. The dashed lines are the boundaries of the SCR. The shadow area is the tiny integration zone of ztoz+dz, where the laser beam and the SCR overlap. (a) Overlap of the first surface layer and the Gaussian beam. (b) Overlap of the second surface layer and the Gaussian beam.