Optical properties and applications of SnS2 SAs with different thickness

Mengli Liu; Hongbo Wu; Ximei Liu; Yaorong Wang; Ming Lei; Wenjun Liu; Wei Guo; Zhiyi Wei

doi:10.29026/oea.2021.200029

Journals >Opto-Electronic Advances >Volume 4 >Issue 10 >Page 200029-1 > Article

Opto-Electronic Advances
Vol. 4, Issue 10, 200029-1 (2021)

Optical properties and applications of SnS₂ SAs with different thickness

Mengli Liu, Hongbo Wu, Ximei Liu, Yaorong Wang, Ming Lei, Wenjun Liu^*, Wei Guo^*, and Zhiyi Wei^*

DOI: 10.29026/oea.2021.200029 Cite this Article

Mengli Liu, Hongbo Wu, Ximei Liu, Yaorong Wang, Ming Lei, Wenjun Liu, Wei Guo, Zhiyi Wei. Optical properties and applications of SnS₂ SAs with different thickness[J]. Opto-Electronic Advances, 2021, 4(10): 200029-1 Copy Citation Text

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Characterization of materials. The AFM image, thickness and nonlinear absorption of (a,d,g)107 nm-SnS2 SA, (b,e,h)7.7 nm-SnS2 SA, (c,f,i)4 nm-SnS2 SA.

Fig. 1. Characterization of materials. The AFM image, thickness and nonlinear absorption of (a,d,g)107 nm-SnS₂ SA, (b,e,h)7.7 nm-SnS₂ SA, (c,f,i)4 nm-SnS₂ SA.

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The simplified representation of QSFL based on SnS2.

Fig. 2. The simplified representation of QSFL based on SnS₂.

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Fig. 3. The function of the QSFL based on 107 nm-SnS₂ SA. (a) The τ of a single pulse. (b) RF spectrum (illustration: RF spectrum within a bandwidth of 2 MHz). (c) Emission spectrum. (d) The monitoring of P_out within 8 hours. (e) Variation of τ and F_rep as functions of P_pump. (f) Variation of P_out and E_p as functions of P_pump.

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Fig. 4. The performance of the QSFL based on 7.7 nm-SnS₂ SA. (a) The τ of a single pulse. (b) The monitoring of P_out within 8 hours. (c) Variation of τ and F_rep as functions of P_pump. (d) Variation of P_out and E_p as functions of P_pump.

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Fig. 5. The performance of the QSFL based on 4 nm-SnS₂ SA. (a) The τ of a single pulse. (b) The monitoring of P_out within 8 hours. (c) Variation of τ and F_rep as functions of P_pump. (d) Variation of P_out and E_p as functions of P_pump.

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Fig. 6. The DFT calculated deformation potential limited electron mobility along k_x direction of SnS₂ vs. the number of SnS₂ layers.

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SA	α_s/I_sat(MW/cm²)	Threshold(mW)	τ(μs)	F_rep (kHz)	Stability (mW)	P_out(mW)	E_p(nJ)
107 nm-SnS₂	40.5%/0.68	212	0.485−1.4	141−241	0.493	12.7	52.6
7.7 nm-SnS₂	36.9%/1.3	276	0.493−0.844	162−240	0.52	14.3	59
4 nm-SnS₂	31.5%/0.52	180	0.503−1.25	123−248	0.543	11.3	45.7

Table 1. The performance of three different QSFLs adopting distinct SA.

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Materilas	α_s (%)	∆λ/λ(nm)	F_rep(kHz)	τ(μs)	P_out/P_pump(mW)	Threshold(mW)	E_p(nJ)	SNR(dB)	Refs.
Graphene	−	0.02/1539.6	10.36−41.8	3.89	<1.2/65	13.5	28.7	30	ref.³⁴
BP	18.55	0.2/1562.87	6.983−15.78	13.2	~1.5/195	50	94.3	45	ref.³⁵
WS₂	2.53	−/1560	47.03~77.93	3.96	6.41/650	400	1179.4	54.2	ref.³⁶
MoS₂	2	−/1551.2	8.77−43.47	3.3	5.91/227	18.9	160	50	ref.³⁷
SnS₂	3.15	0.03/1532.7	172.3−233.0	0.510	9.33/632	290	~40	50	ref.³⁰
SnS₂	40.5	4.3/1530.6	141−241	0.485	12.7/630	180	45.7	50	This work

Table 2. Comparison of QSFL based on various SAs.

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Thickness	Band gap	n_ix (m⁻²)
1-Layer	1.57 eV	2.44×10⁺³
2-Layer	1.52 eV	6.74×10⁺³
4-Layer	1.39 eV	1.13×10⁺⁵
6-Layer	1.34 eV	4.73×10⁺⁵
8-Layer	1.27 eV	1.79×10⁺⁶

Table 3. The intrinsic carrier concentration (k_x) of SnS₂ vs. the number of SnS₂ layers.

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