[1] D. B. Holt, D. C. Joy. SEM Microcharacterization of Semiconductors(1989).

[2] J. Goldstein, D. Newbury, D. Joy, C. Lyman, P. Echlin, E. Lifshin, L. Sawyer, J. Michael. Scanning Electron Microscopy and X-ray Microanalysis(2007).

[3] L. Reimer. Scanning Electron Microscopy: Physics of Image Formation and Microanalysis(1998).

[4] W. Zhou, Z. L. Wang. Scanning Microscopy for Nanotechnology: Techniques and Applications(2007).

[5] A. J. Schwartz, M. Kumar, B. L. Adams, D. P. Field. Electron Backscatter Diffraction in Materials Science(2009).

[6] A. J. Wilkinson, P. B. Hirsch. Electron diffraction based techniques in scanning electron microscopy of bulk materials. Micron, 28, 279-308(1997).

[7] A. J. Wilkinson, T. B. Britton. Strains, planes, and EBSD in materials science. Mater. Today, 15, 366-376(2012).

[8] C. Trager-Cowan, F. Sweeney, P. W. Trimby, A. P. Day, A. Gholinia, N.-H. Schmidt, P. J. Parbrook, A. J. Wilkinson, I. M. Watson. Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films. Phys. Rev. B, 75, 085301(2007).

[9] M. A. Crimp, B. A. Simkin, B. C. Ng. Demonstration of the g·bxu=0 edge dislocation invisibility criterion for electron channelling contrast imaging. Philos. Mag. Lett., 81, 833-837(2001).

[10] Y. Picard, R. Kamaladasa, M. De Graef, N. Nuhfer, W. Mershon, T. Owens, L. Sedlacek, F. Lopour. Future prospects for defect and strain analysis in the SEM via electron channeling. Microsc. Today, 20, 12-16(2012).

[11] G. Naresh-Kumar, B. Hourahine, P. R. Edwards, A. P. Day, A. Winkelmann, A. J. Wilkinson, P. J. Parbrook, G. England, C. Trager-Cowan. Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope. Phys. Rev. Lett., 108, 135503(2012).

[12] S. Zaefferer, N. N. Elhami. Theory and application of electron channelling contrast imaging under controlled diffraction conditions. Acta Mater., 75, 20-50(2014).

[13] J. I. Deitz, S. D. Carnevale, S. A. Ringel, D. W. McComb, T. J. Grassman. Electron channeling contrast imaging for rapid III-V heteroepitaxial characterization. J. Vis. Exp., 101, e52745(2015).

[14] G. Naresh-Kumar, D. Thomson, M. Nouf-Allehiani, J. Bruckbauer, P. R. Edwards, B. Hourahine, R. W. Martin, C. Trager-Cowan. Electron channelling contrast imaging for III-nitride thin film structures. Mater. Sci. Semicond. Process., 47, 44-50(2016).

[15] B. G. Yacobi, D. B. Holt. Cathodoluminescence Microscopy of Inorganic Solids(1990).

[16] P. R. Edwards, R. W. Martin. Cathodoluminescence nano-characterization of semiconductors. Semicond. Sci. Technol., 26, 064005(2011).

[17] E. B. Yakimov. Investigation of electrical and optical properties in semiconductor structures via SEM techniques with high spatial resolution. J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech., 6, 887-889(2012).

[18] https://www.ifkp.tu-berlin.de/fileadmin/i1/Kneissl/EQE_20181120.pdf. https://www.ifkp.tu-berlin.de/fileadmin/i1/Kneissl/EQE_20181120.pdf

[19] J. S. Park, J. K. Kim, J. Cho, T. Y. Seong. Group III-nitride-based ultraviolet light-emitting diodes: ways of increasing external quantum efficiency. ECS J. Solid State Sci. Technol., 6, Q42-Q52(2017).

[20] A. J. Wilkinson, G. Meaden, D. J. Dingley. High-resolution elastic strain measurement from electron backscatter diffraction patterns: new levels of sensitivity. Ultramicroscopy, 106, 307-313(2006).

[21] G. Naresh-Kumar, A. Vilalta-Clemente, H. Jussila, A. Winkelmann, G. Nolze, S. Vespucci, S. Nagarajan, A. J. Wilkinson, C. Trager-Cowan. Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction. Sci. Rep., 7, 10916(2017).

[22] E. A. Holm, A. Winkelmann, S. Farjami, G. Nolze, P. Manohar, M. Himmerlich, G. Rohrer, V. Lebedev, A. D. Rollett, A. Reichmann, D. Srolovitz, H. Weiland. Point-group sensitive orientation mapping using EBSD. Proceedings of the 6th International Conference on Recrystallization and Grain Growth, 281-286(2016).

[23] G. Naresh-Kumar, C. Mauder, K. R. Wang, S. Kraeusel, J. Bruckbauer, P. R. Edwards, B. Hourahine, H. Kalisch, A. Vescan, C. Giesen, M. Heuken. Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope. Appl. Phys. Lett., 102, 142103(2013).

[24] S. D. Carnevale, J. I. Deitz, J. A. Carlin, Y. N. Picard, M. De Graef, S. A. Ringel, T. J. Grassman. Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging. Appl. Phys. Lett., 104, 232111(2014).

[25] J. K. Hite, M. A. Mastro, C. R. Eddy. Approach for dislocation free GaN epitaxy. J. Cryst. Growth, 312, 3143-3146(2010).

[26] A. Schulze, L. Strakos, T. Vystavel, R. Loo, A. Pacco, N. Collaert, W. Vandervost, M. Caymax. Non-destructive characterization of extended crystalline defects in confined semiconductor device structures. Nanoscale, 10, 7058-7066(2018).

[27] P. G. Callahan, B. B. Haidet, D. Jung, G. G. Seward, K. Mukherjee. Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon. Phys. Rev. Mater., 2, 081601(2018).

[28] K. N. Yaung, S. Kirnstoetter, J. Faucher, A. Gerger, A. Lochtefeld, A. Barnett, L. L. Minjoo. Threading dislocation density characterization in III-V photovoltaic materials by electron channeling contrast imaging. J. Cryst. Growth, 453, 65-70(2016).

[29] H. G. J. Moseley. The high-frequency spectra of the elements. Philos. Mag., 27, 703-713(1914).

[30] J. J. Friel, C. E. Lyman. X-ray mapping in electron-beam instruments. Microsc. Microanal., 12, 2-5(2006).

[31] G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl. Spatial clustering of defect luminescence centers in Si-doped low resistivity Al_0.82Ga_{0. 18}N. Appl. Phys. Lett., 107, 072103(2015).

[32] G. Naresh-Kumar, J. Bruckbauer, P. R. Edwards, S. Kraeusel, B. Hourahine, R. W. Martin, M. J. Kappers, M. A. Moram, S. Loveloc, R. A. Oliver, C. J. Humphreys. Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN. Microsc. Microanal., 20, 55-60(2014).

[33] J. Bruckbauer, P. R. Edwards, T. Wang, R. W. Martin. High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures. Appl. Phys. Lett., 98, 141908(2011).

[34] C. E. Norman. Challenging the spatial resolution limits of CL and EBIC. Solid State Phenom., 78, 19-28(2001).

[35] J. Christen, M. Grundmann, D. Bimberg. Scanning cathodoluminescence microscopy—a unique approach to atomic-scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities. J. Vac. Sci. Technol. B, 9, 2358-2368(1991).

[36] G. Kusch, H. Li, P. R. Edwards, J. Bruckbauer, P. J. Parbrook, R. W. Martin. Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN. Appl. Phys. Lett., 104, 092114(2014).

[37] M. D. Smith, D. Thomson, V. Z. Zubialevich, H. Li, G. Naresh-Kumar, C. Trager-Cowan, P. J. Parbrook. Nanoscale fissure formation in Al_xGa_1–xN/GaN heterostructures and their influence on ohmic contact formation. Phys. Status Solidi A, 214, 1600353(2017).

[38] E. Pascal, B. Hourahine, G. Naresh-Kumar, K. Mingard, C. Trager-Cowan. Dislocation contrast in electron channelling contrast images as projections of strain-like components. Mater. Today, 5, 14652-14661(2018).

[39] A. P. Day, T. E. Quested. A comparison of grain imaging and measurement using horizontal orientation and colour orientation contrast imaging, electron backscatter pattern and optical methods. J. Microsc., 195, 186-196(1999).

[40] R. J. Kamaladasa, F. Liu, L. M. Porter, R. F. Davis, D. D. Koleske, G. Mulholland, K. A. Jones, Y. N. Picard. Identifying threading dislocations in GaN films and substrates by electron channeling. J. Microsc., 244, 311-319(2011).

[41] P. M. Coulon, G. Kusch, P. Fletcher, P. Chausse, R. W. Martin, P. Shields. Hybrid top-down/bottom-up fabrication of a highly uniform and organized faceted AlN nanorod scaffold. Materials, 11, 1140(2018).

[42] P. M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga‐Pérez, M. Weyers, M. Kneissl, P. A. Shields. Displacement Talbot lithography for nano-engineering of III-nitride materials. Microsyst. Nanoeng.,(2019).

[43] S. Hagedorn, A. Knauer, A. Mogilatenko, E. Richter, M. Weyers. AlN growth on nano-patterned sapphire: a route for cost efficient pseudo substrates for deep UV LEDs. Phys. Status Solidi A, 213, 3178-3185(2016).

[44] M. Kneissl, T. Y. Seong, J. Han, H. Amano. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photonics., 13, 233-244(2019).

[45] V. Potin, P. Ruterana, G. Nouet, R. C. Pond, H. Morkoç. Mosaic growth of GaN on (0001) sapphire: a high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries. Phys. Rev. B, 61, 5587-5599(2000).

[46] S. I. Wright, M. M. Nowell, D. P. Field. A review of strain analysis using electron backscatter diffraction. Microsc. Microanal., 17, 316-329(2011).

[47] F. Bachmann, R. Hielscher, H. Schaeben. Texture analysis with MTEX–free and open source software toolbox. Solid State Phenom., 160, 63-68(2010).

[48] A. Winkelmann, C. Trager-Cowan, F. Sweeney, A. P. Day, P. J. Parbrook. Many-beam dynamical simulation of electron backscatter diffraction patterns. Ultramicroscopy, 107, 414-421(2007).

[49] N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouviere, G. Feuillet, P. Vennéguès. Proposition of a model elucidating the AlN-on-Si (111) microstructure. J. Appl. Phys., 123, 215701(2018).

[50] R. Mantach, P. Vennéguès, J. Z. Perez, P. De Mierry, M. Leroux, M. Portail, G. Feuillet. Semipolar (10-11) GaN growth on silicon-on-insulator substrates: defect reduction and meltback etching suppression. J. Appl. Phys., 125, 035703(2019).

[51] B. Leung, D. Wang, Y. S. Kuo, J. Han. Complete orientational access for semipolar GaN devices on sapphire. Phys. Status Solidi B, 253, 23-35(2016).

[52] F. Scholz. Semipolar GaN grown on foreign substrates: a review. Semicond. Sci. Technol., 27, 024002(2012).

[53] Y. Zhang, J. Bai, Y. Hou, X. Yu, Y. Gong, R. M. Smith, T. Wang. Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates. Appl. Phys. Lett., 109, 241906(2016).

[54] J. Bruckbauer, Z. Li, G. Naresh-Kumar, M. Warzecha, P. R. Edwards, L. Jiu, Y. Gong, J. Bai, T. Wang, C. Trager-Cowan, R. W. Martin. Spatially-resolved optical and structural properties of semi-polar (11-22) Al_xGa_1–xN with x up to 0.56. Sci. Rep., 7, 10804(2017).

[55] Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition. J. Appl. Phys., 98, 093519(2005).

     P. P. Paskov, K. P. Korona, R. Schifano, A. Reszka, M. Sobanska, B. Monemar, T. Paskova, P. S. Perkowska, A. Wysmołek, S. Figge, D. Hommel, K. Klosek, Z. R. Zytkiewicz. Dynamics of stacking faults luminescence in GaN/Si nanowires. J. Lumin., 155, 293-297(2014).

[57] J. Lähnemann, U. Jahn, O. Brandt, T. Flissikowski, P. Dogan, H. T. Grahn. Luminescence associated with stacking faults in GaN. J. Phys. D, 47, 423001(2014).

[58] G. Naresh-Kumar, D. Thomson, Y. Zhang, J. Bai, L. Jiu, X. Yu, Y. P. Gong, R. M. Smith, T. Wang, C. Trager-Cowan. Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. J. Appl. Phys., 124, 065301(2018).

[59] A. Mogilatenko, I. Bryan, Z. Bryan, V. Küller, A. Knauer, S. Mita, A. Rice, J. Jeschke, U. Zeimer, L. Hussey, C. Shelton, M. Weyers, G. Tränkle, J. Tweedie, J. P. Maria, R. Collazo, Z. Sitar. The role of surface kinetics on composition and quality of AlGaN. J. Cryst. Growth, 451, 65-71(2016).

     Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth. J. Cryst. Growth, 402, 222-229(2014).

[61] I. Bryan, Z. Bryan, S. Mita, A. Rice, J. Tweedie, R. Collazo, Z. Sitar. Surface kinetics in AlN growth: a universal model for the control of surface morphology in III-nitrides. J. Cryst. Growth, 438, 81-89(2016).

[62] L. Schade, T. Wernicke, J. Raß, S. Ploch, M. Weyers, M. Kneissl, U. T. Schwarz. Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures. Phys. Status Solidi A, 211, 756-760(2014).

[63] G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, R. W. Martin. Analysis of doping concentration and composition in wide bandgap AlGaN: Si by wavelength dispersive x-ray spectroscopy. Semicond. Sci. Technol., 32, 035020(2017).

[64] Y. Kubo, H. Kotaro, U. Akira. Minimum detection limit and spatial resolution of thin-sample field-emission electron probe microanalysis. Ultramicroscopy, 135, 64-70(2013).

[65] D. Drouin, A. R. Couture, D. Joly, X. Tastet, V. Aimez, R. Gauvin. CASINO V2. 42—a fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users. Scanning, 29, 92-101(2007).

[66] https://doi.org/10.15129/b5238863-a088-4f30-8b13-2625260eb73a. https://doi.org/10.15129/b5238863-a088-4f30-8b13-2625260eb73a