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Journals >Journal of Infrared and Millimeter Waves >Volume 40 >Issue 5 >Page 595 > Article

Journal of Infrared and Millimeter Waves
Vol. 40, Issue 5, 595 (2021)

High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Guo-Shuai WEI¹, Rui-Ting HAO^1、*, Jie GUO¹, Xiao-Le MA¹, Xiao-Ming LI¹, Yong LI¹, Fa-Ran CHANG¹, Yu ZHUANG¹, Guo-Wei WANG^2、3、**, Ying-Qiang XU^2、3, Zhi-Chuan NIU^2、3, and Yao WANG⁴

Author Affiliations

¹School of Energy and Environment Science，Yunnan Normal University，Kunming 650092，China

²State Key Laboratory for SLs and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

³Synergetic Innovation Center of Quantum Information and Quantum Physics，University of Science and Technology of China，Hefei 230026，China

⁴National Center for International Research on Green Optoelectronics，Guangdong Provincial Key Laboratory of Optical Information Materials and Technology，Institute of Electronic Paper Displays，South China Academy of Advanced Optoelectronics，South China Normal University，Guangzhou 510006，China

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DOI: 10.11972/j.issn.1001-9014.2021.05.005 Cite this Article

Guo-Shuai WEI, Rui-Ting HAO, Jie GUO, Xiao-Le MA, Xiao-Ming LI, Yong LI, Fa-Ran CHANG, Yu ZHUANG, Guo-Wei WANG, Ying-Qiang XU, Zhi-Chuan NIU, Yao WANG. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 595 Copy Citation Text

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References

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[11] Y Huang, J H Ryou, R D Dupuis et al. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors. Journal of Crystal Growth, 314, 92-96(2011).

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[16] Q Durlin, J P Perez, R Rossignol et al. InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain. Quantum Sensing and Nano Electronics and Photonics Xiv, 10111(2017).

[17] H Li, S Liu, O O Cellek et al. A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy. Journal of Crystal Growth, 378, 145-149(2013).

[18] T Schuler-Sandy, B K L Casias, L Casias et al. Growth of InAs-InAsSb SLS through the use of digital alloys. Journal of Crystal Growth, 425, 29-32(2015).

[19] S Liu, H Li, O O Cellek et al. Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy. Applied Physics Letters, 102(2013).

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[21] A P Ongstad, R Kaspi, C E Moeller et al. Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAs–GaSb type-II superlattices. Journal of Applied Physics, 89, 2185-2188(2001).

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Guo-Shuai WEI, Rui-Ting HAO, Jie GUO, Xiao-Le MA, Xiao-Ming LI, Yong LI, Fa-Ran CHANG, Yu ZHUANG, Guo-Wei WANG, Ying-Qiang XU, Zhi-Chuan NIU, Yao WANG. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 595

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