Yuhua Li, Xiang Wang, Roy Davidson, Brent E. Little, Sai Tak Chu. Four-wave mixing in silicon-nanocrystal embedded high-index doped silica micro-ring resonator[J]. Journal of Semiconductors, 2021, 42(4): 042302

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- Journal of Semiconductors
- Vol. 42, Issue 4, 042302 (2021)

Fig. 1. (Color online) (a) TEM image of the Si-nc layer prior to deposition of the upper high-index doped silica layer. The sample was polished to an approximate 5 nm thickness for TEM characterization. (b) Computed dispersion of 1.75 × 1.75 μ m2 (w/ 20 nm Si-nc - D1) and 2.55 × 1.75 μ m2 (w/ 20 nm Si-nc - D6) cross-section for high-index doped silica waveguide embedded with 20 nm Si-nc, and without Si-nc case for cross-sections of 1.75 × 1.75 μ m2 (w/o Si-nc - D1) and 2.55 × 1.75 μ m2 (w/o Si-nc - D6). (c, e) SEM images of the fabricated Si-nc embedded waveguides. (d, f) Simulated electric field distribution of the fundamental TE mode of (c, e).
![(Color online) (a) Model of a basic add–drop single MRR[26]. (b) B versus κ for MRRs with the fixed radius of 595 μm while varying α in step of 0.02 dB/cm. (c) B versus κ with the fixed α of 0.1 dB/cm while varying the radius R.](/richHtml/jos/2021/42/4/042302/img_2.jpg)
Fig. 2. (Color online) (a) Model of a basic add–drop single MRR[26 ]. (b) B versus κ for MRRs with the fixed radius of 595 μ m while varying α in step of 0.02 dB/cm. (c) B versus κ with the fixed α of 0.1 dB/cm while varying the radius R .

Fig. 3. (Color online) Optical response of TE mode from the through port and drop port of 49 GHz MRRs with (a, e) cross-section of 1.75 × 1.75 μ m2 without Si-nc layer, (b, f) cross-section of 2.55 × 1.75 μ m2 without Si-nc layer, (c, g) cross-section of 1.75 × 1.75 μ m2 with 20 nm Si-nc, and (d, h) cross-section of 2.55 × 1.75 μ m2 with 20 nm Si-nc.

Fig. 4. (Color online) (a) Experimental setup for FWM process. (b–e) Recorded spectra from OSA of MRRs with cross-section of 1.75 × 1.75 μ m2 (b, c) without Si-nc layer, and (d, e) with 20 nm Si-nc layer.

Fig. 5. (Color online) (a) Conversion efficiency versus incident pump power for FWM in the 49 GHz MRRs for with and without Si-nc thin film cases. (b) Idler power dependence of the square of the pump power for FWM in the MRRs for with and without Si-nc thin film cases.
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Table 1. Design parameters and fabrication processes of the MRRs.
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Table 2. Device parameters of the MRRs with a radius of 595 μ m on the same mask.
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Table 3. Measured parameters for devices without Si-nc layer.
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Table 4. Measured parameters for devices with 20 nm Si-nc layer.
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Table 5. Parameter comparisons of the 49 GHz MRRs for dominant TE polarization.

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