• Journal of Semiconductors
  • Vol. 42, Issue 4, 042302 (2021)
Yuhua Li1,2, Xiang Wang3, Roy Davidson3, Brent E. Little4, and Sai Tak Chu2
Author Affiliations
  • 1Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
  • 2Department of Physics, City University of Hong Kong, Hong Kong 999077, China
  • 3QXP Technology Inc., Xi’an 710119, China
  • 4State Key Laboratory of Transient Optics and Photonics, XIOPM, CAS, Xi’an 710119, China
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    DOI: 10.1088/1674-4926/42/4/042302 Cite this Article
    Yuhua Li, Xiang Wang, Roy Davidson, Brent E. Little, Sai Tak Chu. Four-wave mixing in silicon-nanocrystal embedded high-index doped silica micro-ring resonator[J]. Journal of Semiconductors, 2021, 42(4): 042302 Copy Citation Text show less
    (Color online) (a) TEM image of the Si-nc layer prior to deposition of the upper high-index doped silica layer. The sample was polished to an approximate 5 nm thickness for TEM characterization. (b) Computed dispersion of 1.75 × 1.75 μm2 (w/ 20 nm Si-nc - D1) and 2.55 × 1.75 μm2 (w/ 20 nm Si-nc - D6) cross-section for high-index doped silica waveguide embedded with 20 nm Si-nc, and without Si-nc case for cross-sections of 1.75 × 1.75 μm2 (w/o Si-nc - D1) and 2.55 × 1.75 μm2 (w/o Si-nc - D6). (c, e) SEM images of the fabricated Si-nc embedded waveguides. (d, f) Simulated electric field distribution of the fundamental TE mode of (c, e).
    Fig. 1. (Color online) (a) TEM image of the Si-nc layer prior to deposition of the upper high-index doped silica layer. The sample was polished to an approximate 5 nm thickness for TEM characterization. (b) Computed dispersion of 1.75 × 1.75 μm2 (w/ 20 nm Si-nc - D1) and 2.55 × 1.75 μm2 (w/ 20 nm Si-nc - D6) cross-section for high-index doped silica waveguide embedded with 20 nm Si-nc, and without Si-nc case for cross-sections of 1.75 × 1.75 μm2 (w/o Si-nc - D1) and 2.55 × 1.75 μm2 (w/o Si-nc - D6). (c, e) SEM images of the fabricated Si-nc embedded waveguides. (d, f) Simulated electric field distribution of the fundamental TE mode of (c, e).
    (Color online) (a) Model of a basic add–drop single MRR[26]. (b) B versus κ for MRRs with the fixed radius of 595 μm while varying α in step of 0.02 dB/cm. (c) B versus κ with the fixed α of 0.1 dB/cm while varying the radius R.
    Fig. 2. (Color online) (a) Model of a basic add–drop single MRR[26]. (b) B versus κ for MRRs with the fixed radius of 595 μm while varying α in step of 0.02 dB/cm. (c) B versus κ with the fixed α of 0.1 dB/cm while varying the radius R.
    (Color online) Optical response of TE mode from the through port and drop port of 49 GHz MRRs with (a, e) cross-section of 1.75 × 1.75 μm2 without Si-nc layer, (b, f) cross-section of 2.55 × 1.75 μm2 without Si-nc layer, (c, g) cross-section of 1.75 × 1.75 μm2 with 20 nm Si-nc, and (d, h) cross-section of 2.55 × 1.75 μm2 with 20 nm Si-nc.
    Fig. 3. (Color online) Optical response of TE mode from the through port and drop port of 49 GHz MRRs with (a, e) cross-section of 1.75 × 1.75 μm2 without Si-nc layer, (b, f) cross-section of 2.55 × 1.75 μm2 without Si-nc layer, (c, g) cross-section of 1.75 × 1.75 μm2 with 20 nm Si-nc, and (d, h) cross-section of 2.55 × 1.75 μm2 with 20 nm Si-nc.
    (Color online) (a) Experimental setup for FWM process. (b–e) Recorded spectra from OSA of MRRs with cross-section of 1.75 × 1.75 μm2 (b, c) without Si-nc layer, and (d, e) with 20 nm Si-nc layer.
    Fig. 4. (Color online) (a) Experimental setup for FWM process. (b–e) Recorded spectra from OSA of MRRs with cross-section of 1.75 × 1.75 μm2 (b, c) without Si-nc layer, and (d, e) with 20 nm Si-nc layer.
    (Color online) (a) Conversion efficiency versus incident pump power for FWM in the 49 GHz MRRs for with and without Si-nc thin film cases. (b) Idler power dependence of the square of the pump power for FWM in the MRRs for with and without Si-nc thin film cases.
    Fig. 5. (Color online) (a) Conversion efficiency versus incident pump power for FWM in the 49 GHz MRRs for with and without Si-nc thin film cases. (b) Idler power dependence of the square of the pump power for FWM in the MRRs for with and without Si-nc thin film cases.
    WaferStructureAnneala-Si deposition
    *RTA: Rapid thermal annealing.
    w/o Si-nc layer2 μm n = 1.60 4 h/1150 °C
    w/ Si-nc layer1 μm n = 1.60 + 50 nm Si-nc + RTA* @1100 °C 1 min + 1 μm n = 1.60 4 h/1150 °CSiH4 = 72 sccm, N2O = 0, 349 W, 1 Torr, 5 s
    Table 1. Design parameters and fabrication processes of the MRRs.
    No.Gap (μm) Width (μm) Structure
    D11.22Add/drop
    D21.32Add/drop
    D31.42Add/drop
    D41.52Add/drop
    D51.62Add/drop
    D60.83Add/drop
    D71.03Add/drop
    D81.23Add/drop
    Table 2. Device parameters of the MRRs with a radius of 595 μm on the same mask.
    No.Cross-section (μm2) Gap (μm) κ1, κ2α (dB/cm) Q (TE) FSRB
    D11.75 × 1.751.20.10630.117.4 × 1054927.3
    D21.75 × 1.751.30.08180.111.0 × 1064926.2
    D31.75 × 1.751.40.06670.101.3 × 1064925.7
    D41.75 × 1.751.50.05410.141.3 × 1064912.8
    D51.75 × 1.751.60.04170.131.8 × 1064911.5
    D62.55 × 1.750.80.10070.088.6 × 1054935.9
    D72.55 × 1.751.00.06870.081.5 × 1064938.3
    D82.55 × 1.751.20.05240.052.5 × 1064957.3
    Table 3. Measured parameters for devices without Si-nc layer.
    No.Cross-section (μm2) Gap (μm) κ1, κ2α (dB/cm) Q (TE) FSRB
    D11.75 × 1.751.20.13240.154.9 × 1054930.4
    D21.75 × 1.751.30.09950.206.3 × 1054928.8
    D31.75 × 1.751.40.08330.197.8 × 1054930.4
    D41.75 × 1.751.50.05420.327.2 × 1054910.8
    D51.75 × 1.751.60.05040.278.6 × 1054913.1
    D62.55 × 1.750.80.13250.184.6 × 1054927.5
    D72.55 × 1.751.00.07830.159.5 × 1054940.1
    D82.55 × 1.751.20.04970.161.3 × 1064928.7
    Table 4. Measured parameters for devices with 20 nm Si-nc layer.
    WaferNo.Cross-section (μm2) Insertion loss (dB/facet)(FEp)4(FEs)2(FEi)2γ (W−1m−1)
    w/o Si-nc layerD11.75 × 1.754.85.6 × 1060.144
    w/o Si-nc layerD62.55 × 1.755.14.6 × 1060.120
    w/ 20 nm Si-nc layerD11.75 × 1.755.03.4 × 1050.366
    w/ 20 nm Si-nc layerD62.55 × 1.755.44.1 × 1050.212
    Table 5. Parameter comparisons of the 49 GHz MRRs for dominant TE polarization.
    Yuhua Li, Xiang Wang, Roy Davidson, Brent E. Little, Sai Tak Chu. Four-wave mixing in silicon-nanocrystal embedded high-index doped silica micro-ring resonator[J]. Journal of Semiconductors, 2021, 42(4): 042302
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