Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etching

Bo Gao; Tao Chen; Vanthanh Khuat; Jinhai Si; Xun Hou

doi:10.3788/COL201614.021407

Journals >Chinese Optics Letters >Volume 14 >Issue 2 >Page 021407 > Article

Chinese Optics Letters
Vol. 14, Issue 2, 021407 (2016)

Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etching

Bo Gao, Tao Chen, Vanthanh Khuat, Jinhai Si^*, and Xun Hou

Author Affiliations

Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronics & Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China

show less

DOI: 10.3788/COL201614.021407 Cite this Article Set citation alerts

Bo Gao, Tao Chen, Vanthanh Khuat, Jinhai Si, Xun Hou. Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etching[J]. Chinese Optics Letters, 2016, 14(2): 021407 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Abstract

A method for fabricating deep grating structures on a silicon carbide (SiC) surface by a femtosecond laser and chemical-selective etching is developed. Periodic lines corresponding to laser-induced structure change (LISC) are formed by femtosecond laser irradiation, and then the SiC material in the LISC zone is removed by a mixed solution of hydrofluoric acid and nitric acid to form grating grooves. Grating grooves with a high-aspect ratio of approximately 25 are obtained. To obtain a small grating period, femtosecond laser exposure through a phase mask was used to fabricate grating structures with a 1.07 μm period on the surface of the SiC.