• Journal of Semiconductors
  • Vol. 40, Issue 3, 032703 (2019)
Xiaorang Tian1,2,3, Peide Han1,2, Guanchao Zhao3, Rong Yang3..., Liwei Li3, Yuan Meng3 and Ted Guo3|Show fewer author(s)
Author Affiliations
  • 1State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3ENN Solar Energy Co., Ltd., Langfang 065001, China
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    DOI: 10.1088/1674-4926/40/3/032703 Cite this Article
    Xiaorang Tian, Peide Han, Guanchao Zhao, Rong Yang, Liwei Li, Yuan Meng, Ted Guo. Pyramid size control and morphology treatment for high-efficiency silicon heterojunction solar cells[J]. Journal of Semiconductors, 2019, 40(3): 032703 Copy Citation Text show less
    (Color online) Symmetrical a-Si:H(i)/c-Si/a-Si:H(i) structure for lifetime test structure.
    Fig. 1. (Color online) Symmetrical a-Si:H(i)/c-Si/a-Si:H(i) structure for lifetime test structure.
    (Color online) Schematic cross-section of the silicon heterojunction solar cell structure.
    Fig. 2. (Color online) Schematic cross-section of the silicon heterojunction solar cell structure.
    (Color online) An optical microscopy image of the silicon surface during the texturing progress.
    Fig. 3. (Color online) An optical microscopy image of the silicon surface during the texturing progress.
    (Color online) A schematic diagram of pyramidal structure forming on wafer surface.
    Fig. 4. (Color online) A schematic diagram of pyramidal structure forming on wafer surface.
    (Color online) The etching amount increase with etching time.
    Fig. 5. (Color online) The etching amount increase with etching time.
    (Color online) The relationship between pyramid sizes and etching amounts at the transition.
    Fig. 6. (Color online) The relationship between pyramid sizes and etching amounts at the transition.
    The formation process of both large and small pyramids.
    Fig. 7. The formation process of both large and small pyramids.
    Scanning electron microscope (SEM) images of samples with various pyramid sizes.
    Fig. 8. Scanning electron microscope (SEM) images of samples with various pyramid sizes.
    (Color online) The influence of pyramid size distribution on MCLT and Voc.
    Fig. 9. (Color online) The influence of pyramid size distribution on MCLT and Voc.
    (Color online) The transmission electron microscopy (TEM) image at the a-Si:H(i)/c-Si interface of excessively small pyramid.
    Fig. 10. (Color online) The transmission electron microscopy (TEM) image at the a-Si:H(i)/c-Si interface of excessively small pyramid.
    (Color online) The influences of pyramid size on wafer reflection and Jsc.
    Fig. 11. (Color online) The influences of pyramid size on wafer reflection and Jsc.
    (Color online) The relationship between FF/PFF/Rs and pyramid size.
    Fig. 12. (Color online) The relationship between FF/PFF/Rs and pyramid size.
    (Color online) The influence of pyramid size on solar cell effciency.
    Fig. 13. (Color online) The influence of pyramid size on solar cell effciency.
    Typical SEM images of a pyramid as-textured and post-smoothing: (a) and (c) is the valley and the tip of pyramid as-textured; (b) and (d) is the valley and the tip of pyramid post-smoothing.
    Fig. 14. Typical SEM images of a pyramid as-textured and post-smoothing: (a) and (c) is the valley and the tip of pyramid as-textured; (b) and (d) is the valley and the tip of pyramid post-smoothing.
    (Color online) Comparison of minority carrier lifetime with and without smoothing process.
    Fig. 15. (Color online) Comparison of minority carrier lifetime with and without smoothing process.
    (Color online) Comparison of (a) Voc, (b) PFF, and (c) Eff between solar cells with and without the smoothing process.
    Fig. 16. (Color online) Comparison of (a) Voc, (b) PFF, and (c) Eff between solar cells with and without the smoothing process.
    (Color online) Illuminated I–V characteristics of SHJ cell of 23.6% efficiency.
    Fig. 17. (Color online) Illuminated I–V characteristics of SHJ cell of 23.6% efficiency.
    NaOH (wt%)Temperature (°C)AdditiveEtching amounts at the transition (mg)Pyramids size (μm)
    IPA (v/v%)GP (v/v%)TS41 (v/v%)
    08500000
    58500.10120010.2
    28510005806
    58500.203003.3
    68500.1504004
    58500.3302002.2
    480001.53503.1
    Table 1. The etching amount at the transition point and the pyramid size under different texturing conditions.
    Xiaorang Tian, Peide Han, Guanchao Zhao, Rong Yang, Liwei Li, Yuan Meng, Ted Guo. Pyramid size control and morphology treatment for high-efficiency silicon heterojunction solar cells[J]. Journal of Semiconductors, 2019, 40(3): 032703
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