High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer

Jianliang Huang; Chengcheng Zhao; Biying Nie; Shiyu Xie; Dominic C. M. Kwan; Xiao Meng; Yanhua Zhang; Diana L. Huffaker; Wenquan Ma

doi:10.1364/PRJ.385177

[1] J. Beck, T. Welch, P. Mitra, K. Reiff, X. Sun, J. Abshire. A highly sensitive multi-element HgCdTe e-APD detector for IPDA lidar applications. J. Electron. Mater., 43, 2970-2977(2014).

[2] J. Abautret, J. P. Perez, A. Evirgen, J. Rothman, A. Cordat, P. Christol. Characterization of midwave infrared InSb avalanche photodiode. J. Appl. Phys., 117, 244502(2015).

[3] A. Rogalski. Recent progress in infrared detector technologies. Infrared Phys. Technol., 54, 136-154(2010).

[4] C. H. Tan, A. Velichko, L. W. L. J. S. Ng. Few-photon detection using InAs avalanche photodiodes. Opt. Express, 27, 5835-5842(2019).

[5] R. J. McIntyre. Multiplication noise in uniform avalanche diodes. IEEE Trans. Electron Devices, 13, 164-168(1966).

[6] J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, J. Campbell. The HgCdTe electron avalanche photodiode. J. Electron. Mater., 35, 1166-1173(2006).

[7] W. L. Sun, Z. W. Lu, X. G. Zheng, J. C. Campbell, S. J. Maddox, H. P. Nair, S. R. Bank. High-gain InAs avalanche photodiodes. IEEE J. Quantum Electron., 49, 154-161(2013).

[8] A. R. J. Marshall, C. H. Tan, M. J. Steer, J. P. R. David. Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. Appl. Phys. Lett., 93, 111107(2008).

[9] A. R. J. Marshall, J. P. R. David, C. H. Tan, M. J. Steer. Impact ionization in InAs electron avalanche photodiode. IEEE Trans. Electron Devices, 57, 2631-2638(2010).

[10] A. R. J. Marshall, C. H. Tan, M. J. Steer, J. P. R. David. Extremely low excess noise in InAs electron avalanche photodiodes. IEEE Photonics Technol. Lett., 21, 866-868(2009).

[11] P. J. Ker, A. R. J. Marshall, J. P. R. David, C. H. Tan. Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing. Phys. Status Solidi C, 9, 310-313(2012).

[12] X. X. Zhou, J. S. Ng, C. H. Tan. InAs photodiode for low temperature sensing. Proc. SPIE, 9639, 963901(2015).

[13] I. Vurgaftman, J. R. Meyer, L. R. Ram-Mohan. Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys., 89, 5815-5875(2001).

[14] W. L. Sun, S. J. Maddox, S. R. Bank, J. C. Campbell. Room temperature high-gain InAs/AlAsSb avalanche photodiode. IEEE Photonics Conference, 350-351(2014).

[15] P. J. Ker, J. P. R. David, C. H. Tan. Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes. Opt. Express, 20, 29568-29576(2012).

[16] C. H. Tan, S. Y. Xie, J. J. Xie. Low noise avalanche photodiodes incorporating a 40 nm AlAsSb avalanche region. IEEE J. Quantum Electron., 48, 36-41(2016).

[17] X. Yi, S. Y. Xie, B. L. Liang, L. W. Lim, X. X. Zhou, M. C. Debnath, D. L. Huffaker, C. H. Tan, J. P. R. David. Demonstration of large ionization coefficient ratio in AlAs_0.56Sb_0.44 lattice matched to InP. Sci. Rep., 8, 9107(2018).

[18] X. Yi, S. Y. Xie, B. L. Liang, L. W. Lim, J. S. Cheong, M. C. Debnath, D. L. Huffaker, C. H. Tan, J. P. R. David. Extremely low excess noise and high sensitivity AlAs_0.56Sb_0.44 avalanche photodiodes. Nat. Photonics, 13, 683-686(2019).

[19] M. E. Woodson, M. Ren, S. J. Maddox, Y. J. Chen, S. R. Bank, J. C. Campbel. Low-noise AlInAsSb avalanche photodiode. Appl. Phys. Lett., 108, 081102(2016).

[20] Q. Li, W. Q. Ma, Y. H. Zhang, K. Cui, J. L. Huang, Y. Wei, Y. L. Cao, W. Y. Wang, Y. L. Liu, P. Jin. Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector. Chin. Sci. Bull., 59, 3696-3700(2014).

[21] . InAs photodiodes. Laser-Components(2019).

[22] J. S. Ng, X. X. Zhou, A. Auckloo, B. White, S. Y. Zhang, A. Krysa, J. P. R. David, C. H. Tan. High sensitivity InAs photodiodes for mid-infrared detection. Proc. SPIE, 9988, 99880K(2016).

[23] Y. Yuan, A. K. Rockwell, Y. W. Peng, J. Y. Zheng, S. D. March, A. H. Jones, M. Ren, S. R. Bank, J. C. Campbell. Comparison of different period digital alloy Al_0.7InAsSb avalanche photodiodes. J. Lightwave Technol., 37, 3647-3654(2019).

[24] M. S. Long, A. Y. Gao, P. Wang, H. Xia, C. Ott, C. Pan, Y. J. Fu, E. F. Liu, X. S. Chen, W. Lu, T. Nilges, J. B. Xu, X. M. Wang, W. D. Hu, F. Miao. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci. Adv., 3, e1700589(2017).

[25] . Indium arsenide detectors(2018).

[26] . InAs photovoltaic detector p10090-01(2018).

[27] A. R. J. Marshall, P. J. Ker, A. Krysa, J. P. R. David, C. H. Tan. High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. Opt. Express, 19, 23341-23349(2011).