High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer

Jianliang Huang; Chengcheng Zhao; Biying Nie; Shiyu Xie; Dominic C. M. Kwan; Xiao Meng; Yanhua Zhang; Diana L. Huffaker; Wenquan Ma

doi:10.1364/PRJ.385177

Journals >Photonics Research >Volume 8 >Issue 5 >Page 755 > Article

Photonics Research
Vol. 8, Issue 5, 755 (2020)

High-performance mid-wavelength InAs avalanche photodiode using AlAs_0.13Sb_0.87 as the multiplication layer

Jianliang Huang^1、2, Chengcheng Zhao^1、2, Biying Nie^1、2, Shiyu Xie^3、4、*, Dominic C. M. Kwan³, Xiao Meng³, Yanhua Zhang^1、2, Diana L. Huffaker³, and Wenquan Ma^{1、2、5、*}

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Physics and Astronomy, Cardiff University, Cardiff, UK

⁴e-mail: XieS1@cardiff.ac.uk

⁵e-mail: wqma@semi.ac.cn

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DOI: 10.1364/PRJ.385177 Cite this Article Set citation alerts

Jianliang Huang, Chengcheng Zhao, Biying Nie, Shiyu Xie, Dominic C. M. Kwan, Xiao Meng, Yanhua Zhang, Diana L. Huffaker, Wenquan Ma. High-performance mid-wavelength InAs avalanche photodiode using AlAs_0.13Sb_0.87 as the multiplication layer[J]. Photonics Research, 2020, 8(5): 755 Copy Citation Text

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