A single photon avalanche photodiode detector (SPAD) has many advantages such as large avalanche gain, fast response, high detection efficiency, and easy integration. SPAD array devices can be used for low-light three-dimensional imaging; these devices have important applications in fields such as biochemistry, quantum communication, and lidar. Therefore, it is significant to study the detection technology of SPAD and its array. In this paper, we review and present the working principle and array structure performance of a near-infrared InGaAs/InP SPAD unit. We analyze the major influencing factors such as the dark counting rate, detection efficiency, and after pulses; moreover, we investigate the main direction for device optimization. Further, the main technical schemes of the SPAD array devices used in recent years have been summarized. We provide the sources of crosstalk and methods for eliminating crosstalk. In addition, we compare the technologies used and the results of relevant research institutions.