[24] A. Kikuchi, M. Tada, K. Miwa, K. Kishino. Growth and characterization of InGaN/GaN nanocolumn LED. Proc. SPIE, 6129, 612905(2006).
[38] C. Zhao, T. K. Ng, N. Wei, A. Prabaswara, M. S. Alias, B. Janjua, C. Shen, B. S. Ooi. Facile formation of high-quality InGaN/GaN quantum-disks-in-nanowires on bulk-metal substrates for high-power light-emitters. Nano Lett., 16, 1056-1063(2016).
[40] B. Park, J. K. Lee, C. T. Koch, M. Wölz, L. Geelhaar, S. H. Oh. High‐resolution mapping of strain partitioning and relaxation in InGaN/GaN nanowire heterostructures. Adv. Sci., 9, 2200323(2022).