Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale

A. Pandey; J. Min; Y. Malhotra; M. Reddeppa; Y. Xiao; Y. Wu; Z. Mi

doi:10.1364/PRJ.473318

Journals >Photonics Research >Volume 10 >Issue 12 >Page 2809 > Article

Photonics Research
Vol. 10, Issue 12, 2809 (2022)

Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale | Spotlight on Optics

A. Pandey, J. Min, Y. Malhotra, M. Reddeppa, Y. Xiao, Y. Wu, and Z. Mi^*

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Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

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DOI: 10.1364/PRJ.473318 Cite this Article Set citation alerts

A. Pandey, J. Min, Y. Malhotra, M. Reddeppa, Y. Xiao, Y. Wu, Z. Mi. Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale[J]. Photonics Research, 2022, 10(12): 2809 Copy Citation Text

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