• Photonics Research
  • Vol. 12, Issue 3, 505 (2024)
Xilai Zhang1、†, Dan Zhao2、†, Ding Zhang1, Qiang Xue1、3, Fei Fan2、4, Yulong Liao1, Qinghui Yang1, and Qiye Wen1、3、*
Author Affiliations
  • 1School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 2Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Institute of Modern Optics, Nankai University, Tianjin 300350, China
  • 3Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, China
  • 4e-mail: fanfei_gdz@126.com
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    DOI: 10.1364/PRJ.509876 Cite this Article Set citation alerts
    Xilai Zhang, Dan Zhao, Ding Zhang, Qiang Xue, Fei Fan, Yulong Liao, Qinghui Yang, Qiye Wen. Wafer-level substrate-free YIG single crystal film for a broadband tunable terahertz isolator[J]. Photonics Research, 2024, 12(3): 505 Copy Citation Text show less

    Abstract

    Yttrium iron garnet (YIG) is a promising material for various terahertz applications due to its special optical properties. At present, a high-quality YIG wafer is the desire of terahertz communities and it is still challenging to prepare substrate-free YIG single crystal films. In this work, we prepared wafer-level substrate-free La:YIG single crystal films, for the first time, to our knowledge. Terahertz optical and magneto-optical properties of La:YIG films were characterized by terahertz time domain spectroscopy (THz-TDS). Results show that the as-prepared La:YIG film has an insertion loss of less than 3 dB and a low absorption coefficient of less than 10 cm-1 below 1.6 THz. Benefitting from the thickness of the substrate-free YIG films and low insertion loss, their terahertz properties could be further manipulated by simply using a wafer-stacking technique. When four La:YIG films were stacked, there was an insertion loss of less than 10 dB in the range of 0.1-1.2 THz. The Faraday rotation angle of the four-layer-stacked La:YIG films reached 19°, and the isolation could reach 17 dB. By further increasing the stacking number to eight pieces, a remarkable Faraday rotation angle of 45° was achieved with an isolation of 23 dB, which is important for practical application in the THz band. This material may provide a milestone opportunity to make various non-reciprocal devices, such as isolators and phase shifters.
    a=12.376+0.122x,

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    (ExA45°)2+(EyA+45°)22ExEyA45°A+45°cosΔδ=sin2Δδ,

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    Δδ=δ+45°δ45°.

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    AL(ω)=12[A+45°(ω)eiσ+45°(ω)iA45°(ω)eiσ45°(ω)],

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    AR(ω)=12[A+45°(ω)eiσ+45°(ω)+iA45°(ω)eiσ45°(ω)].

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    φ=(φRφL)/2.

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    n(ω)=1+Δδ(ω)c/ωd,

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    TYIG=10lg(Iout/I0),

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    α=2ln{T[n(ω)+1]2/[4n(ω)]}/d,

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    ΔφLL/RR=φL/Rφ0.

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    V=φ/(d·B),

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    Xilai Zhang, Dan Zhao, Ding Zhang, Qiang Xue, Fei Fan, Yulong Liao, Qinghui Yang, Qiye Wen. Wafer-level substrate-free YIG single crystal film for a broadband tunable terahertz isolator[J]. Photonics Research, 2024, 12(3): 505
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