• Photonics Research
  • Vol. 11, Issue 12, 2159 (2023)
Tianxun Gong1, Boyuan Yan1, Taiping Zhang2, Wen Huang1, Yuhao He1, Xiaoyu Xu3、4, Song Sun3、4、5、*, and Xiaosheng Zhang1、6、*
Author Affiliations
  • 1School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China
  • 2Tianfu Xinglong Lake Laboratory, Chengdu 610299, China
  • 3Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
  • 4Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China
  • 5e-mail: sunsong_mtrc@caep.cn
  • 6e-mail: zhangxs@uestc.edu.cn
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    DOI: 10.1364/PRJ.500883 Cite this Article Set citation alerts
    Tianxun Gong, Boyuan Yan, Taiping Zhang, Wen Huang, Yuhao He, Xiaoyu Xu, Song Sun, Xiaosheng Zhang. Fano resonance-enhanced Si/MoS2 photodetector[J]. Photonics Research, 2023, 11(12): 2159 Copy Citation Text show less

    Abstract

    In this work, a Si/MoS2 heterojunction photodetector enhanced by hot electron injection through Fano resonance is developed. By preparing Au oligomers using capillary-assisted particle assembly (CAPA) on the silicon substrate with a nanohole array and covering few-layer MoS2 with Au electrodes on top of the oligomer structures, the Fano resonance couples with a Si/MoS2 heterojunction. With on-resonance excitation, Fano resonance generated many hot electrons on the surface of oligomers, and the hot electrons were injected into MoS2, providing an increased current in the photodetector under a bias voltage. The photodetectors exhibited a broadband photoresponse ranging from 450 to 1064 nm, and a large responsivity up to 52 A/W at a wavelength of 785 nm under a bias voltage of 3 V. The demonstrated Fano resonance-enhanced Si/MoS2 heterojunction photodetector provides a strategy to improve the photoresponsivity of two-dimensional materials-based photodetectors for optoelectronic applications in the field of visible and near-infrared detection.
    R=IiIdPopt×S,

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    σext=σsc+σabs.(A1)

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    σabs=1I0QdV.(A2)

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    σsc=1I0(n·Ssc)dS.(A3)

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    Tianxun Gong, Boyuan Yan, Taiping Zhang, Wen Huang, Yuhao He, Xiaoyu Xu, Song Sun, Xiaosheng Zhang. Fano resonance-enhanced Si/MoS2 photodetector[J]. Photonics Research, 2023, 11(12): 2159
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